Fabrication of highly transparent self-switching diodes using single layer indium tin oxide
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Veröffentlicht in: | Electronics letters 2009, Vol.45 (1), p.79-81 |
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container_title | Electronics letters |
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creator | KETTLE, J PERKS, R. M HOYLE, R. T |
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doi_str_mv | 10.1049/el:20092309 |
format | Article |
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ispartof | Electronics letters, 2009, Vol.45 (1), p.79-81 |
issn | 0013-5194 1350-911X |
language | eng |
recordid | cdi_crossref_primary_10_1049_el_20092309 |
source | Alma/SFX Local Collection |
subjects | Applied sciences Diodes Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | Fabrication of highly transparent self-switching diodes using single layer indium tin oxide |
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