0.75 V micro-power SI memory cell with feedthrough error reduction

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Electronics letters 2008-04, Vol.44 (9), p.561-562
Hauptverfasser:	SAWIGUN, C, SERDIJN, W. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	562
container_issue	9
container_start_page	561
container_title	Electronics letters
container_volume	44
creator	SAWIGUN, C SERDIJN, W. A
description
doi_str_mv	10.1049/el:20080722
format	Article
fullrecord	<record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1049_el_20080722</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20350168</sourcerecordid><originalsourceid>FETCH-LOGICAL-c193t-5cd4921f758b7a579c3e8b4028e241c70255a0beafb1d8c282d89269b0fd65c70</originalsourceid><addsrcrecordid>eNo9kM1OwzAQhC0EEqFw4gV84YRSdp24trlBVaBSJQ78iFvkOGsalDSRnarq2xNU4DRazbernWHsEmGKkJsbam4FgAYlxBFLMJOQGsSPY5YAYJZKNPkpO4vxaxyFMSph9zBVkr_ztnahS_tuR4G_LHlLbRf23FHT8F09rLknqoZ16Lafa04hdIEHqrZuqLvNOTvxtol08asT9vaweJ0_pavnx-X8bpU6NNmQSlflRqBXUpfKSmVcRrrMQWgSOToFQkoLJVlfYqWd0KLSRsxMCb6aydGfsOvD3fHTGAP5og91a8O-QCh-4hfUFH_xR_rqQPc2Otv4YDeujv8rAsZycKbhG1KAWPo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>0.75 V micro-power SI memory cell with feedthrough error reduction</title><creator>SAWIGUN, C ; SERDIJN, W. A</creator><creatorcontrib>SAWIGUN, C ; SERDIJN, W. A</creatorcontrib><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>DOI: 10.1049/el:20080722</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>London: Institution of Electrical Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Magnetic and optical mass memories ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Storage and reproduction of information ; Transistors</subject><ispartof>Electronics letters, 2008-04, Vol.44 (9), p.561-562</ispartof><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c193t-5cd4921f758b7a579c3e8b4028e241c70255a0beafb1d8c282d89269b0fd65c70</citedby><cites>FETCH-LOGICAL-c193t-5cd4921f758b7a579c3e8b4028e241c70255a0beafb1d8c282d89269b0fd65c70</cites></display><links><openurl>$$Topenurl_article</openurl><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>776</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20350168$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SAWIGUN, C</creatorcontrib><creatorcontrib>SERDIJN, W. A</creatorcontrib><title>0.75 V micro-power SI memory cell with feedthrough error reduction</title><title>Electronics letters</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Magnetic and optical mass memories</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Storage and reproduction of information</subject><subject>Transistors</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>false</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OwzAQhC0EEqFw4gV84YRSdp24trlBVaBSJQ78iFvkOGsalDSRnarq2xNU4DRazbernWHsEmGKkJsbam4FgAYlxBFLMJOQGsSPY5YAYJZKNPkpO4vxaxyFMSph9zBVkr_ztnahS_tuR4G_LHlLbRf23FHT8F09rLknqoZ16Lafa04hdIEHqrZuqLvNOTvxtol08asT9vaweJ0_pavnx-X8bpU6NNmQSlflRqBXUpfKSmVcRrrMQWgSOToFQkoLJVlfYqWd0KLSRsxMCb6aydGfsOvD3fHTGAP5og91a8O-QCh-4hfUFH_xR_rqQPc2Otv4YDeujv8rAsZycKbhG1KAWPo</recordid><startdate>20080424</startdate><enddate>20080424</enddate><creator>SAWIGUN, C</creator><creator>SERDIJN, W. A</creator><general>Institution of Electrical Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080424</creationdate><title>0.75 V micro-power SI memory cell with feedthrough error reduction</title><author>SAWIGUN, C ; SERDIJN, W. A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-5cd4921f758b7a579c3e8b4028e241c70255a0beafb1d8c282d89269b0fd65c70</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Magnetic and optical mass memories</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Storage and reproduction of information</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><creatorcontrib>SAWIGUN, C</creatorcontrib><creatorcontrib>SERDIJN, W. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>no_fulltext</fulltext></delivery><addata><au>SAWIGUN, C</au><au>SERDIJN, W. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>0.75 V micro-power SI memory cell with feedthrough error reduction</atitle><jtitle>Electronics letters</jtitle><date>2008-04-24</date><risdate>2008</risdate><volume>44</volume><issue>9</issue><spage>561</spage><epage>562</epage><pages>561-562</pages><issn>0013-5194</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><cop>London</cop><pub>Institution of Electrical Engineers</pub><doi>10.1049/el:20080722</doi><tpages>2</tpages></addata></record>
fulltext	no_fulltext
identifier	ISSN: 0013-5194
ispartof	Electronics letters, 2008-04, Vol.44 (9), p.561-562
issn	0013-5194 1350-911X
language	eng
recordid	cdi_crossref_primary_10_1049_el_20080722
source
subjects	Applied sciences Electronics Exact sciences and technology Magnetic and optical mass memories Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Storage and reproduction of information Transistors
title	0.75 V micro-power SI memory cell with feedthrough error reduction
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T18%3A08%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=0.75%20V%20micro-power%20SI%20memory%20cell%20with%20feedthrough%20error%20reduction&rft.jtitle=Electronics%20letters&rft.au=SAWIGUN,%20C&rft.date=2008-04-24&rft.volume=44&rft.issue=9&rft.spage=561&rft.epage=562&rft.pages=561-562&rft.issn=0013-5194&rft.eissn=1350-911X&rft.coden=ELLEAK&rft_id=info:doi/10.1049/el:20080722&rft_dat=%3Cpascalfrancis_cross%3E20350168%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true