A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3

Low-dimensional magnetic topological insulators exhibiting the quantum anomalous Hall (QAH) effect have garnered significant interest among researchers. Ta 2 Se 3 , a novel two-dimensional (2D) monolayer (ML) material, has been predicted to be a QAH insulator, characterized by a high Curie temperatu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2025
Hauptverfasser: Tang, Yanghao, Du, Ao, Kuang, Long, Yang, Ting, Qiu, Shi, Cai, Jinming, Yan, Cuixia
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title Journal of materials chemistry. C, Materials for optical and electronic devices
container_volume
creator Tang, Yanghao
Du, Ao
Kuang, Long
Yang, Ting
Qiu, Shi
Cai, Jinming
Yan, Cuixia
description Low-dimensional magnetic topological insulators exhibiting the quantum anomalous Hall (QAH) effect have garnered significant interest among researchers. Ta 2 Se 3 , a novel two-dimensional (2D) monolayer (ML) material, has been predicted to be a QAH insulator, characterized by a high Curie temperature of 474 K, a large topological band gap of 157 meV and an intriguing spin-oriented Chern number by first-principles calculations. Furthermore, the layer Hall effect (LHE) has been observed in bilayer antiferromagnetic Ta 2 Se 3 under a vertical electric field. These outstanding tunable topological properties indicate very bright prospects for two-dimensional Ta 2 Se 3 in topological physical devices at high temperatures.
doi_str_mv 10.1039/D4TC04243C
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_D4TC04243C</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_D4TC04243C</sourcerecordid><originalsourceid>FETCH-crossref_primary_10_1039_D4TC04243C3</originalsourceid><addsrcrecordid>eNqVjr0KwjAYRYMoWLSLT_DNQjVp0tqOUhUHN7uXUBOopInmR_HtVRCdPcs9wx0OQjOCFwTTcrlhdYVZymg1QFGKM5ysMsqGX0_zMYqdO-MXBcmLvIzQYQ3XwLUPPXBteq5McLDnSoGQUrQeOg3a3IQCfzfJqeuFdp3RXIHzNrQ-WAE1hxSOAugUjSRXTsSfnaD5bltX-6S1xjkrZHOxXc_toyG4eSc3v2T61_kJceFFtA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Tang, Yanghao ; Du, Ao ; Kuang, Long ; Yang, Ting ; Qiu, Shi ; Cai, Jinming ; Yan, Cuixia</creator><creatorcontrib>Tang, Yanghao ; Du, Ao ; Kuang, Long ; Yang, Ting ; Qiu, Shi ; Cai, Jinming ; Yan, Cuixia</creatorcontrib><description>Low-dimensional magnetic topological insulators exhibiting the quantum anomalous Hall (QAH) effect have garnered significant interest among researchers. Ta 2 Se 3 , a novel two-dimensional (2D) monolayer (ML) material, has been predicted to be a QAH insulator, characterized by a high Curie temperature of 474 K, a large topological band gap of 157 meV and an intriguing spin-oriented Chern number by first-principles calculations. Furthermore, the layer Hall effect (LHE) has been observed in bilayer antiferromagnetic Ta 2 Se 3 under a vertical electric field. These outstanding tunable topological properties indicate very bright prospects for two-dimensional Ta 2 Se 3 in topological physical devices at high temperatures.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/D4TC04243C</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2025</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-crossref_primary_10_1039_D4TC04243C3</cites><orcidid>0000-0002-9809-9752 ; 0000-0003-0869-1515</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27902,27903,27904</link.rule.ids></links><search><creatorcontrib>Tang, Yanghao</creatorcontrib><creatorcontrib>Du, Ao</creatorcontrib><creatorcontrib>Kuang, Long</creatorcontrib><creatorcontrib>Yang, Ting</creatorcontrib><creatorcontrib>Qiu, Shi</creatorcontrib><creatorcontrib>Cai, Jinming</creatorcontrib><creatorcontrib>Yan, Cuixia</creatorcontrib><title>A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Low-dimensional magnetic topological insulators exhibiting the quantum anomalous Hall (QAH) effect have garnered significant interest among researchers. Ta 2 Se 3 , a novel two-dimensional (2D) monolayer (ML) material, has been predicted to be a QAH insulator, characterized by a high Curie temperature of 474 K, a large topological band gap of 157 meV and an intriguing spin-oriented Chern number by first-principles calculations. Furthermore, the layer Hall effect (LHE) has been observed in bilayer antiferromagnetic Ta 2 Se 3 under a vertical electric field. These outstanding tunable topological properties indicate very bright prospects for two-dimensional Ta 2 Se 3 in topological physical devices at high temperatures.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2025</creationdate><recordtype>article</recordtype><recordid>eNqVjr0KwjAYRYMoWLSLT_DNQjVp0tqOUhUHN7uXUBOopInmR_HtVRCdPcs9wx0OQjOCFwTTcrlhdYVZymg1QFGKM5ysMsqGX0_zMYqdO-MXBcmLvIzQYQ3XwLUPPXBteq5McLDnSoGQUrQeOg3a3IQCfzfJqeuFdp3RXIHzNrQ-WAE1hxSOAugUjSRXTsSfnaD5bltX-6S1xjkrZHOxXc_toyG4eSc3v2T61_kJceFFtA</recordid><startdate>2025</startdate><enddate>2025</enddate><creator>Tang, Yanghao</creator><creator>Du, Ao</creator><creator>Kuang, Long</creator><creator>Yang, Ting</creator><creator>Qiu, Shi</creator><creator>Cai, Jinming</creator><creator>Yan, Cuixia</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-9809-9752</orcidid><orcidid>https://orcid.org/0000-0003-0869-1515</orcidid></search><sort><creationdate>2025</creationdate><title>A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3</title><author>Tang, Yanghao ; Du, Ao ; Kuang, Long ; Yang, Ting ; Qiu, Shi ; Cai, Jinming ; Yan, Cuixia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-crossref_primary_10_1039_D4TC04243C3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2025</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tang, Yanghao</creatorcontrib><creatorcontrib>Du, Ao</creatorcontrib><creatorcontrib>Kuang, Long</creatorcontrib><creatorcontrib>Yang, Ting</creatorcontrib><creatorcontrib>Qiu, Shi</creatorcontrib><creatorcontrib>Cai, Jinming</creatorcontrib><creatorcontrib>Yan, Cuixia</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tang, Yanghao</au><au>Du, Ao</au><au>Kuang, Long</au><au>Yang, Ting</au><au>Qiu, Shi</au><au>Cai, Jinming</au><au>Yan, Cuixia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2025</date><risdate>2025</risdate><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Low-dimensional magnetic topological insulators exhibiting the quantum anomalous Hall (QAH) effect have garnered significant interest among researchers. Ta 2 Se 3 , a novel two-dimensional (2D) monolayer (ML) material, has been predicted to be a QAH insulator, characterized by a high Curie temperature of 474 K, a large topological band gap of 157 meV and an intriguing spin-oriented Chern number by first-principles calculations. Furthermore, the layer Hall effect (LHE) has been observed in bilayer antiferromagnetic Ta 2 Se 3 under a vertical electric field. These outstanding tunable topological properties indicate very bright prospects for two-dimensional Ta 2 Se 3 in topological physical devices at high temperatures.</abstract><doi>10.1039/D4TC04243C</doi><orcidid>https://orcid.org/0000-0002-9809-9752</orcidid><orcidid>https://orcid.org/0000-0003-0869-1515</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 2050-7526
ispartof Journal of materials chemistry. C, Materials for optical and electronic devices, 2025
issn 2050-7526
2050-7534
language eng
recordid cdi_crossref_primary_10_1039_D4TC04243C
source Royal Society Of Chemistry Journals 2008-
title A quantum anomalous Hall effect in novel two-dimensional structure Ta 2 Se 3
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T03%3A42%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20quantum%20anomalous%20Hall%20effect%20in%20novel%20two-dimensional%20structure%20Ta%202%20Se%203&rft.jtitle=Journal%20of%20materials%20chemistry.%20C,%20Materials%20for%20optical%20and%20electronic%20devices&rft.au=Tang,%20Yanghao&rft.date=2025&rft.issn=2050-7526&rft.eissn=2050-7534&rft_id=info:doi/10.1039/D4TC04243C&rft_dat=%3Ccrossref%3E10_1039_D4TC04243C%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true