Electronic structure of thin MoS 2 films

The valence electron structure of exfoliated monolayer MoS 2 deposited onto SiO 2 was determined by UV photoelectron spectroscopy through component analysis in combination with Auger electron microscopy. The valence electron cut-off for bulk MoS 2 was found at 0.64 eV binding energy whilst monolayer...

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Veröffentlicht in:	RSC applied interfaces 2024-11, Vol.1 (6), p.1276-1284
Hauptverfasser:	Chambers, Benjamin A., Gibson, Christopher T., Andersson, Gunther G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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