Alloying two-dimensional VSi 2 N 4 to realize an ideal half-metal towards spintronic applications

Modulating the electronic properties of VSi N with high Curie temperature to realize an ideal half-metal is appealing towards spintronic applications. Here, by using first-principles calculations, we propose alloying the VSi N monolayer via substitutive doping of transition metal atoms (Sc-Ni, Y-Mo)...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2025-01
Hauptverfasser:	Sun, Jin-Lan, Zhang, Wei-Kang, Dong, Mi-Mi, Li, Zong-Liang, Wang, Chuan-Kui, Fu, Xiao-Xiao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!