Gradual conductance modulation by defect reorganization in amorphous oxide memristors

Amorphous oxides show great prospects in revolutionizing memristors benefiting from their abundant non-stoichiometric composition. However, an in-depth investigation of the memristive characteristics in amorphous oxides is inadequate and the resistive switching mechanism is still controversial. In t...

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Veröffentlicht in:	Materials horizons 2023-11, Vol.1 (12), p.5643-5655
Hauptverfasser:	Li, Siqin, Du, Jigang, Lu, Bojing, Yang, Ruqi, Hu, Dunan, Liu, Pingwei, Li, Haiqing, Bai, Jingsheng, Ye, Zhizhen, Lu, Jianguo
Format:	Artikel
Sprache:	eng
Schlagworte:	Conduction bands Defects Electric fields Filaments High resistance Memristors Modulation Nanoclusters Oxidation resistance Oxygen
Online-Zugang:	Volltext
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