Monotonous alloying-driven band edge emission in two-dimensional hexagonal GaSe 1− x Te x semiconductors for visible to near-infrared photodetection

This work reports molecular beam epitaxy (MBE) of two-dimensional (2D) GaSe 1− x Te x ternary alloys that have recently attracted a lot of interest in physics for prospective electronics and optoelectronics even though they face crucial challenges in their epitaxial technology. Disregarding a distin...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-02, Vol.11 (5), p.1772-1781
Hauptverfasser:	Diep, Nhu Quynh, Chen, Yu Xun, Nguyen, Duc Loc, Duong, My Ngoc, Wu, Ssu Kuan, Liu, Cheng Wei, Wen, Hua Chiang, Chou, Wu Ching, Juang, Jenh Yih, Hsu, Yao Jane, Le, Van Qui, Chu, Ying Hao, Huynh, Sa Hoang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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