Interface contact and modulated electronic properties by in-plain strains in a graphene-MoS 2 heterostructure

Designing a specific heterojunction by assembling suitable two-dimensional (2D) semiconductors has shown significant potential in next-generation micro-nano electronic devices. In this paper, we study the structural and electronic properties of graphene-MoS (Gr-MoS ) heterostructures with in-plain b...

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Veröffentlicht in:	RSC advances 2023-01, Vol.13 (5), p.2903-2911
Hauptverfasser:	Wang, Qian, Song, Zhenjun, Tao, Junhui, Jin, Haiqin, Li, Sha, Wang, Yuran, Liu, Xuejuan, Zhang, Lin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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