A two-dimensional topological nodal-line material MgN 4 with extremely large magnetoresistance

Using first-principles calculations, we predict a stable two-dimensional atomically thin material MgN 4 . This material has a perfect intrinsic electron–hole compensation characteristic with high carrier mobility, making it a promising candidate material with extremely large magnetoresistance. As th...

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Veröffentlicht in:	Nanoscale 2022-10, Vol.14 (38), p.14191-14198
Hauptverfasser:	Zhao, Xinlei, Liu, Dapeng, Gao, Miao, Yan, Xun-Wang, Ma, Fengjie, Lu, Zhong-Yi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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