Morphology and carrier mobility of high-B-content B x Al 1− x N ternary alloys from an ab initio global search

The excellent properties of III-nitrides and their alloys have led to significant applications in optoelectronic devices. Boron, the lightest IIIA group element, makes it possible to extend the flexibility of III-nitride alloys. However, both B x Al 1− x N and B x Ga 1− x N ternary alloys suffer fro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanoscale 2022-08, Vol.14 (31), p.11335-11342
Hauptverfasser: Qi, Zhanbin, Shi, Zhiming, Zang, Hang, Ma, Xiaobao, Yang, Yuxin, Jia, Yuping, Jiang, Ke, Sun, Xiaojuan, Li, Dabing
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!