P-n junctions in planar GaAs nanowires

Control over the doping at the nanoscale during the growth of nanostructures is one of the key challenges of device fabrication. In this work we study p (Zn)- and n (Sn)- doping distributions and a formation of 3D p-n junctions in planar GaAs nanowires grown on doped GaAs substrates. We employ a com...

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Veröffentlicht in:	CrystEngComm 2023-02, Vol.25 (9), p.1374-1382
Hauptverfasser:	Borodin, Bogdan R, Alekseev, Prokhor A, Khayrudinov, Vladislav, Ubyivovk, Evgeniy, Berdnikov, Yury, Sibirev, Nickolay, Lipsanen, Harri
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Doping Electron microscopy Field effect transistors Gallium arsenide Microscopy Misalignment Nanostructure Nanowires P-n junctions Semiconductor devices Substrates Transistors
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