A mixed-dimensional WS 2 /GaSb heterojunction for high-performance p–n diodes and junction field-effect transistors

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, chips are becoming more and more miniaturized, and complicated dielectric engineering needs to be avoided. Therefore, the introduction of junction field-effect transis...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-01, Vol.10 (4), p.1511-1516
Hauptverfasser:	Cheng, Zichao, Song, Xiufeng, Jiang, Lianfu, Wang, Lude, Sun, Jiamin, Yang, Zaixing, Jian, Yuxuan, Zhang, Shengli, Chen, Xiang, Zeng, Haibo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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