Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials
As liquid-like materials, Cu 2 X (X = S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or temperature fields is one of the trickiest problems limiting the application...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-04, Vol.9 (12), p.4173-4181 |
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container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
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creator | Wei, Yuyu Lu, Ping Zhu, Chenxi Zhao, Kunpeng Lu, Xiaoyue Su, Hong Shi, Xun Chen, Lidong Xu, Fangfang |
description | As liquid-like materials, Cu
2
X (X = S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or temperature fields is one of the trickiest problems limiting the application of Cu
2
X (X = S, Se) in thermoelectric devices. Here, high density lamellar defects consisting of close-packed S/Se double layers have been observed in Cu
2
S, Cu
2
Se and Cu
2
S
0.5
Se
0.5
. Electron energy-loss spectroscopic analyses in the atomic scale surprisingly found that the copper element shows the characteristic of an atom in the close vicinity of the lamellar defects. Such a configuration should have originated from the small electronegativity discrepancy between copper and sulfur/selenium. The as-observed lamellar defects and atomic copper provide new insight into the investigation of copper precipitation problems. Meanwhile, their formation in high density also suggests their important roles in thermoelectric properties. |
doi_str_mv | 10.1039/D1TC00535A |
format | Article |
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2
X (X = S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or temperature fields is one of the trickiest problems limiting the application of Cu
2
X (X = S, Se) in thermoelectric devices. Here, high density lamellar defects consisting of close-packed S/Se double layers have been observed in Cu
2
S, Cu
2
Se and Cu
2
S
0.5
Se
0.5
. Electron energy-loss spectroscopic analyses in the atomic scale surprisingly found that the copper element shows the characteristic of an atom in the close vicinity of the lamellar defects. Such a configuration should have originated from the small electronegativity discrepancy between copper and sulfur/selenium. The as-observed lamellar defects and atomic copper provide new insight into the investigation of copper precipitation problems. Meanwhile, their formation in high density also suggests their important roles in thermoelectric properties.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/D1TC00535A</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-04, Vol.9 (12), p.4173-4181</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76A-b6daa7f95ea4229ade431af0c86aec34e832c9c732f5abca294b81a0afad60893</citedby><cites>FETCH-LOGICAL-c76A-b6daa7f95ea4229ade431af0c86aec34e832c9c732f5abca294b81a0afad60893</cites><orcidid>0000-0002-1974-8575 ; 0000-0001-7262-6174 ; 0000-0001-7937-3624 ; 0000-0002-9683-037X ; 0000-0002-5570-4289 ; 0000-0002-9977-3139 ; 0000-0002-8086-6407</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Wei, Yuyu</creatorcontrib><creatorcontrib>Lu, Ping</creatorcontrib><creatorcontrib>Zhu, Chenxi</creatorcontrib><creatorcontrib>Zhao, Kunpeng</creatorcontrib><creatorcontrib>Lu, Xiaoyue</creatorcontrib><creatorcontrib>Su, Hong</creatorcontrib><creatorcontrib>Shi, Xun</creatorcontrib><creatorcontrib>Chen, Lidong</creatorcontrib><creatorcontrib>Xu, Fangfang</creatorcontrib><title>Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>As liquid-like materials, Cu
2
X (X = S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or temperature fields is one of the trickiest problems limiting the application of Cu
2
X (X = S, Se) in thermoelectric devices. Here, high density lamellar defects consisting of close-packed S/Se double layers have been observed in Cu
2
S, Cu
2
Se and Cu
2
S
0.5
Se
0.5
. Electron energy-loss spectroscopic analyses in the atomic scale surprisingly found that the copper element shows the characteristic of an atom in the close vicinity of the lamellar defects. Such a configuration should have originated from the small electronegativity discrepancy between copper and sulfur/selenium. The as-observed lamellar defects and atomic copper provide new insight into the investigation of copper precipitation problems. Meanwhile, their formation in high density also suggests their important roles in thermoelectric properties.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpFUDtPwzAYtBBIVKULv8AjIAJ-JE48MEQpj0qVGJqhE9EX5zMYJQ6yw8C_JxUIbri74e6GI-ScsxvOpL5d87piLJNZeUQWgmUsyTOZHv95oU7JKsZ3NqPgqlB6QV42fgrOR2doDwP2PQTaoUUzRWpGP4Hzzr9SmMZhjlSf1PkDC7qnF3t6R3fXdIeXdHrDMIzYz70w5waYMDjo4xk5sbPg6leXpH64r6unZPv8uKnKbWJyVSat6gByqzOEVAgNHaaSg2WmUIBGplhIYbTJpbAZtAaETtuCAwMLnWKFlkty9TNrwhhjQNt8BDdA-Go4aw7fNP_fyG88mFYK</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Wei, Yuyu</creator><creator>Lu, Ping</creator><creator>Zhu, Chenxi</creator><creator>Zhao, Kunpeng</creator><creator>Lu, Xiaoyue</creator><creator>Su, Hong</creator><creator>Shi, Xun</creator><creator>Chen, Lidong</creator><creator>Xu, Fangfang</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-1974-8575</orcidid><orcidid>https://orcid.org/0000-0001-7262-6174</orcidid><orcidid>https://orcid.org/0000-0001-7937-3624</orcidid><orcidid>https://orcid.org/0000-0002-9683-037X</orcidid><orcidid>https://orcid.org/0000-0002-5570-4289</orcidid><orcidid>https://orcid.org/0000-0002-9977-3139</orcidid><orcidid>https://orcid.org/0000-0002-8086-6407</orcidid></search><sort><creationdate>20210401</creationdate><title>Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials</title><author>Wei, Yuyu ; Lu, Ping ; Zhu, Chenxi ; Zhao, Kunpeng ; Lu, Xiaoyue ; Su, Hong ; Shi, Xun ; Chen, Lidong ; Xu, Fangfang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76A-b6daa7f95ea4229ade431af0c86aec34e832c9c732f5abca294b81a0afad60893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei, Yuyu</creatorcontrib><creatorcontrib>Lu, Ping</creatorcontrib><creatorcontrib>Zhu, Chenxi</creatorcontrib><creatorcontrib>Zhao, Kunpeng</creatorcontrib><creatorcontrib>Lu, Xiaoyue</creatorcontrib><creatorcontrib>Su, Hong</creatorcontrib><creatorcontrib>Shi, Xun</creatorcontrib><creatorcontrib>Chen, Lidong</creatorcontrib><creatorcontrib>Xu, Fangfang</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wei, Yuyu</au><au>Lu, Ping</au><au>Zhu, Chenxi</au><au>Zhao, Kunpeng</au><au>Lu, Xiaoyue</au><au>Su, Hong</au><au>Shi, Xun</au><au>Chen, Lidong</au><au>Xu, Fangfang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2021-04-01</date><risdate>2021</risdate><volume>9</volume><issue>12</issue><spage>4173</spage><epage>4181</epage><pages>4173-4181</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>As liquid-like materials, Cu
2
X (X = S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or temperature fields is one of the trickiest problems limiting the application of Cu
2
X (X = S, Se) in thermoelectric devices. Here, high density lamellar defects consisting of close-packed S/Se double layers have been observed in Cu
2
S, Cu
2
Se and Cu
2
S
0.5
Se
0.5
. Electron energy-loss spectroscopic analyses in the atomic scale surprisingly found that the copper element shows the characteristic of an atom in the close vicinity of the lamellar defects. Such a configuration should have originated from the small electronegativity discrepancy between copper and sulfur/selenium. The as-observed lamellar defects and atomic copper provide new insight into the investigation of copper precipitation problems. Meanwhile, their formation in high density also suggests their important roles in thermoelectric properties.</abstract><doi>10.1039/D1TC00535A</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-1974-8575</orcidid><orcidid>https://orcid.org/0000-0001-7262-6174</orcidid><orcidid>https://orcid.org/0000-0001-7937-3624</orcidid><orcidid>https://orcid.org/0000-0002-9683-037X</orcidid><orcidid>https://orcid.org/0000-0002-5570-4289</orcidid><orcidid>https://orcid.org/0000-0002-9977-3139</orcidid><orcidid>https://orcid.org/0000-0002-8086-6407</orcidid></addata></record> |
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source | Royal Society Of Chemistry Journals 2008- |
title | Intrinsic lamellar defects containing atomic Cu in Cu 2 X (X = S, Se) thermoelectric materials |
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