Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB 6 nanowires

SmB , which opens up an insulating bulk gap due to hybridization between itinerant d-electrons and localized f-electrons below a critical temperature, turns out to be a topological Kondo insulator possessing exotic conducting states on its surface. However, measurement of the surface-states in SmB d...

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Veröffentlicht in:Nanoscale 2021-12, Vol.13 (48), p.20417-20424
Hauptverfasser: Cui, Yugui, Chu, Yi, Pan, Zhencun, Xing, Yingjie, Huang, Shaoyun, Xu, Hongqi
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container_end_page 20424
container_issue 48
container_start_page 20417
container_title Nanoscale
container_volume 13
creator Cui, Yugui
Chu, Yi
Pan, Zhencun
Xing, Yingjie
Huang, Shaoyun
Xu, Hongqi
description SmB , which opens up an insulating bulk gap due to hybridization between itinerant d-electrons and localized f-electrons below a critical temperature, turns out to be a topological Kondo insulator possessing exotic conducting states on its surface. However, measurement of the surface-states in SmB draws controversial conclusions, depending on the growth methods and experimental techniques used. Herein, we report anisotropic magnetoresistance (AMR) observed in the Kondo energy gap of a single SmB nanowire that is immune to magnetic dopant pollution and features a square cross-section to show high-symmetry crystal facets. The AMR clearly shows a cosine function of included angle between magnetic field and measuring current with a period of π. The positive AMR is interpreted by anisotropically lifting the topological protection of spin-momentum inter-locking surface-states by rotating the in-plane magnetic field, which, therefore, provides the transport evidence that supports the topologically nontrivial nature of the SmB surface-states.
doi_str_mv 10.1039/d1nr07047a
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title Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB 6 nanowires
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