Manipulation of the Rashba effect in layered tellurides MTe (M = Ge, Sn, Pb)

Recently, trigonal layered GeTe was exfoliated from the rhombohedral germanium telluride using a sonication-assisted liquid-phase method in experiments. We identify the blue phosphorene-like MTe (M = Ge, Sn, and Pb) monolayers and bilayers as two-dimensional semiconductors with a large Rashba-type s...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-04, Vol.8 (15), p.5143-5149
Hauptverfasser:	Liu, Chang, Gao, Heng, Li, Yongchang, Wang, Kangying, Burton, Lee A, Ren, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Bilayers Carrier recombination Electric fields Field effect transistors Germanium Intermetallic compounds Lead Liquid phases Monolayers Optoelectronics Phosphorene Semiconductor devices Spin-orbit interactions Tellurides Tin
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