Highly hydrophobic metal-organic framework for self-protecting gate dielectrics
A hydrophobic metal-organic framework (MOF) showing high- κ behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride ( HFDPA ). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity...
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| Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020-06, Vol.8 (24), p.11958-11965 |
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| container_issue | 24 |
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| container_title | Journal of materials chemistry. A, Materials for energy and sustainability |
| container_volume | 8 |
| creator | Inamdar, Arif I Pathak, Abhishek Usman, Muhammad Chiou, Kuan-Ru Tsai, Pei-Hsien Mendiratta, Shruti Kamal, Saqib Liu, Yen-Hsiang Chen, Jenq-Wei Chiang, Ming-Hsi Lu, Kuang-Lieh |
| description | A hydrophobic metal-organic framework (MOF) showing high-
κ
behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (
HFDPA
). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to
κ
99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices.
A high-
κ
copper-based metal-organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics. |
| doi_str_mv | 10.1039/d0ta00605j |
| format | Article |
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κ
behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (
HFDPA
). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to
κ
99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices.
A high-
κ
copper-based metal-organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/d0ta00605j</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Chemical synthesis ; Crystal structure ; Crystallography ; Dielectric constant ; Dielectric loss ; Dielectric properties ; Dielectric relaxation ; Electrical conductivity ; Electrical resistivity ; Hydrophobicity ; Metal-organic frameworks ; Water chemistry ; Water resistance</subject><ispartof>Journal of materials chemistry. A, Materials for energy and sustainability, 2020-06, Vol.8 (24), p.11958-11965</ispartof><rights>Copyright Royal Society of Chemistry 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-ce5752be087cbea9513a30ea2fb807a2015fe9f7733d623de047f5071e25c2f73</citedby><cites>FETCH-LOGICAL-c344t-ce5752be087cbea9513a30ea2fb807a2015fe9f7733d623de047f5071e25c2f73</cites><orcidid>0000-0003-3021-0837 ; 0000-0001-8380-0385 ; 0000-0003-4518-8281 ; 0000-0002-6387-6814</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Inamdar, Arif I</creatorcontrib><creatorcontrib>Pathak, Abhishek</creatorcontrib><creatorcontrib>Usman, Muhammad</creatorcontrib><creatorcontrib>Chiou, Kuan-Ru</creatorcontrib><creatorcontrib>Tsai, Pei-Hsien</creatorcontrib><creatorcontrib>Mendiratta, Shruti</creatorcontrib><creatorcontrib>Kamal, Saqib</creatorcontrib><creatorcontrib>Liu, Yen-Hsiang</creatorcontrib><creatorcontrib>Chen, Jenq-Wei</creatorcontrib><creatorcontrib>Chiang, Ming-Hsi</creatorcontrib><creatorcontrib>Lu, Kuang-Lieh</creatorcontrib><title>Highly hydrophobic metal-organic framework for self-protecting gate dielectrics</title><title>Journal of materials chemistry. A, Materials for energy and sustainability</title><description>A hydrophobic metal-organic framework (MOF) showing high-
κ
behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (
HFDPA
). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to
κ
99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices.
A high-
κ
copper-based metal-organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics.</description><subject>Chemical synthesis</subject><subject>Crystal structure</subject><subject>Crystallography</subject><subject>Dielectric constant</subject><subject>Dielectric loss</subject><subject>Dielectric properties</subject><subject>Dielectric relaxation</subject><subject>Electrical conductivity</subject><subject>Electrical resistivity</subject><subject>Hydrophobicity</subject><subject>Metal-organic frameworks</subject><subject>Water chemistry</subject><subject>Water resistance</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kM1LAzEQxYMoWGov3oUVb8LqbLJpssdSP6oUeqnnkM1Otlu3zZpskf73Riv15lxmHu_HzPAIuczgLgNW3FfQa4Ax8PUJGVDgkIq8GJ8eZynPySiENcSSESyKAVnMmnrV7pPVvvKuW7myMckGe92mztd6G5X1eoOfzr8n1vkkYGvTzrseTd9s66TWPSZVg23UvjHhgpxZ3QYc_fYheXt6XE5n6Xzx_DKdzFPD8rxPDXLBaYkghSlRFzxjmgFqaksJQlPIuMXCCsFYNaasQsiF5SAypNxQK9iQ3Bz2xl8-dhh6tXY7v40nFc0zLrmEPI_U7YEy3oXg0arONxvt9yoD9Z2ZeoDl5Cez1whfHWAfzJH7yzT61__5qqss-wJ8DHQh</recordid><startdate>20200628</startdate><enddate>20200628</enddate><creator>Inamdar, Arif I</creator><creator>Pathak, Abhishek</creator><creator>Usman, Muhammad</creator><creator>Chiou, Kuan-Ru</creator><creator>Tsai, Pei-Hsien</creator><creator>Mendiratta, Shruti</creator><creator>Kamal, Saqib</creator><creator>Liu, Yen-Hsiang</creator><creator>Chen, Jenq-Wei</creator><creator>Chiang, Ming-Hsi</creator><creator>Lu, Kuang-Lieh</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7ST</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>JG9</scope><scope>L7M</scope><scope>SOI</scope><orcidid>https://orcid.org/0000-0003-3021-0837</orcidid><orcidid>https://orcid.org/0000-0001-8380-0385</orcidid><orcidid>https://orcid.org/0000-0003-4518-8281</orcidid><orcidid>https://orcid.org/0000-0002-6387-6814</orcidid></search><sort><creationdate>20200628</creationdate><title>Highly hydrophobic metal-organic framework for self-protecting gate dielectrics</title><author>Inamdar, Arif I ; Pathak, Abhishek ; Usman, Muhammad ; Chiou, Kuan-Ru ; Tsai, Pei-Hsien ; Mendiratta, Shruti ; Kamal, Saqib ; Liu, Yen-Hsiang ; Chen, Jenq-Wei ; Chiang, Ming-Hsi ; Lu, Kuang-Lieh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-ce5752be087cbea9513a30ea2fb807a2015fe9f7733d623de047f5071e25c2f73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical synthesis</topic><topic>Crystal structure</topic><topic>Crystallography</topic><topic>Dielectric constant</topic><topic>Dielectric loss</topic><topic>Dielectric properties</topic><topic>Dielectric relaxation</topic><topic>Electrical conductivity</topic><topic>Electrical resistivity</topic><topic>Hydrophobicity</topic><topic>Metal-organic frameworks</topic><topic>Water chemistry</topic><topic>Water resistance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Inamdar, Arif I</creatorcontrib><creatorcontrib>Pathak, Abhishek</creatorcontrib><creatorcontrib>Usman, Muhammad</creatorcontrib><creatorcontrib>Chiou, Kuan-Ru</creatorcontrib><creatorcontrib>Tsai, Pei-Hsien</creatorcontrib><creatorcontrib>Mendiratta, Shruti</creatorcontrib><creatorcontrib>Kamal, Saqib</creatorcontrib><creatorcontrib>Liu, Yen-Hsiang</creatorcontrib><creatorcontrib>Chen, Jenq-Wei</creatorcontrib><creatorcontrib>Chiang, Ming-Hsi</creatorcontrib><creatorcontrib>Lu, Kuang-Lieh</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Environment Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Inamdar, Arif I</au><au>Pathak, Abhishek</au><au>Usman, Muhammad</au><au>Chiou, Kuan-Ru</au><au>Tsai, Pei-Hsien</au><au>Mendiratta, Shruti</au><au>Kamal, Saqib</au><au>Liu, Yen-Hsiang</au><au>Chen, Jenq-Wei</au><au>Chiang, Ming-Hsi</au><au>Lu, Kuang-Lieh</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly hydrophobic metal-organic framework for self-protecting gate dielectrics</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2020-06-28</date><risdate>2020</risdate><volume>8</volume><issue>24</issue><spage>11958</spage><epage>11965</epage><pages>11958-11965</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>A hydrophobic metal-organic framework (MOF) showing high-
κ
behaviour was synthesized by the reaction of copper ions with 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (
HFDPA
). The unique, highly hydrophobic nature of the material protects it from re-adsorbing water, even in a high humidity environment. The dielectric constant of the MOF showed an unprecedented increasing trend, reaching up to
κ
99 at 300 K and 1 kHz after the complete removal of guest and coordinated water molecules. The unusual dielectric behaviour of the compound along with its water resistant properties is the first report of such behaviour and it paves the way for the development of moisture-stable microelectronic devices.
A high-
κ
copper-based metal-organic framework with unusual dielectric behaviour and outstanding water resistant properties was successfully designed for self-protecting microelectronic devices as gate dielectrics.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d0ta00605j</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-3021-0837</orcidid><orcidid>https://orcid.org/0000-0001-8380-0385</orcidid><orcidid>https://orcid.org/0000-0003-4518-8281</orcidid><orcidid>https://orcid.org/0000-0002-6387-6814</orcidid></addata></record> |
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| identifier | ISSN: 2050-7488 |
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| source | Royal Society Of Chemistry Journals |
| subjects | Chemical synthesis Crystal structure Crystallography Dielectric constant Dielectric loss Dielectric properties Dielectric relaxation Electrical conductivity Electrical resistivity Hydrophobicity Metal-organic frameworks Water chemistry Water resistance |
| title | Highly hydrophobic metal-organic framework for self-protecting gate dielectrics |
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