A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2
Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS was studied. It is found that annealing treatment can...
Gespeichert in:
| Veröffentlicht in: | RSC advances 2021-01, Vol.11 (9), p.5204-5217 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 5217 |
|---|---|
| container_issue | 9 |
| container_start_page | 5204 |
| container_title | RSC advances |
| container_volume | 11 |
| creator | Jian, Jiaying Chang, Honglong Dong, Pengfan Bai, Zewen Zuo, Kangnian |
| description | Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS
was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS
based photodetector increase from 0.1722 A W
and 10
Jones to 0.2907 A W
and 10
Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS
has been obtained. The criterion for the CVD-grown 2D MoS
to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS
has been proposed. The CVD-grown 2D MoS
and the annealed CVD-grown 2D MoS
are oxygen-doped MoS
while the vulcanized CVD-grown 2D MoS
is pure MoS
. The variation in the photoelectric performance of CVD-grown 2D MoS
results from differences in the O-doping concentration and the bandgap. |
| doi_str_mv | 10.1039/d0ra10302k |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1039_D0RA10302K</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>35424465</sourcerecordid><originalsourceid>FETCH-LOGICAL-c995-d05700608ef29bdb1ea841122e8f54773773f21d9147beea8a892653a4e5dbe63</originalsourceid><addsrcrecordid>eNpNUF1LxDAQDKJ4x3kv_gDJs1BN0iRtHkvPLzwR9PC1pM3Gq16bklTFf2-8U3FZ2GFndlgGoWNKzihJ1bkhXkdA2OsemjLCZcKIVPv_8ATNQ3ghsaSgTNJDNEkFZ5xLMUVdgTto1rpvQ4et83hcA37XvtVj63rc9tvFsHajgw00o28bPICPyk73DWBnsd7RBsbIR4daBzA4HpdPi-TZu48eswW-c4-YHaEDqzcB5j9zhlaXF6vyOlneX92UxTJplBKJISKLz5IcLFO1qSnonFPKGORW8CxLY1tGjaI8qyGSOldMilRzEKYGmc7Q6c628S4ED7YafNtp_1lRUn2nVi3IQ7FN7TaKT3bi4a3uwPxJfzNKvwDNAGa8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>PubMed Central Open Access</source><source>PubMed Central</source><creator>Jian, Jiaying ; Chang, Honglong ; Dong, Pengfan ; Bai, Zewen ; Zuo, Kangnian</creator><creatorcontrib>Jian, Jiaying ; Chang, Honglong ; Dong, Pengfan ; Bai, Zewen ; Zuo, Kangnian</creatorcontrib><description>Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS
was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS
based photodetector increase from 0.1722 A W
and 10
Jones to 0.2907 A W
and 10
Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS
has been obtained. The criterion for the CVD-grown 2D MoS
to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS
has been proposed. The CVD-grown 2D MoS
and the annealed CVD-grown 2D MoS
are oxygen-doped MoS
while the vulcanized CVD-grown 2D MoS
is pure MoS
. The variation in the photoelectric performance of CVD-grown 2D MoS
results from differences in the O-doping concentration and the bandgap.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/d0ra10302k</identifier><identifier>PMID: 35424465</identifier><language>eng</language><publisher>England</publisher><ispartof>RSC advances, 2021-01, Vol.11 (9), p.5204-5217</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c995-d05700608ef29bdb1ea841122e8f54773773f21d9147beea8a892653a4e5dbe63</citedby><cites>FETCH-LOGICAL-c995-d05700608ef29bdb1ea841122e8f54773773f21d9147beea8a892653a4e5dbe63</cites><orcidid>0000-0003-0400-3658 ; 0000-0002-4369-2022</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35424465$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Jian, Jiaying</creatorcontrib><creatorcontrib>Chang, Honglong</creatorcontrib><creatorcontrib>Dong, Pengfan</creatorcontrib><creatorcontrib>Bai, Zewen</creatorcontrib><creatorcontrib>Zuo, Kangnian</creatorcontrib><title>A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS
was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS
based photodetector increase from 0.1722 A W
and 10
Jones to 0.2907 A W
and 10
Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS
has been obtained. The criterion for the CVD-grown 2D MoS
to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS
has been proposed. The CVD-grown 2D MoS
and the annealed CVD-grown 2D MoS
are oxygen-doped MoS
while the vulcanized CVD-grown 2D MoS
is pure MoS
. The variation in the photoelectric performance of CVD-grown 2D MoS
results from differences in the O-doping concentration and the bandgap.</description><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpNUF1LxDAQDKJ4x3kv_gDJs1BN0iRtHkvPLzwR9PC1pM3Gq16bklTFf2-8U3FZ2GFndlgGoWNKzihJ1bkhXkdA2OsemjLCZcKIVPv_8ATNQ3ghsaSgTNJDNEkFZ5xLMUVdgTto1rpvQ4et83hcA37XvtVj63rc9tvFsHajgw00o28bPICPyk73DWBnsd7RBsbIR4daBzA4HpdPi-TZu48eswW-c4-YHaEDqzcB5j9zhlaXF6vyOlneX92UxTJplBKJISKLz5IcLFO1qSnonFPKGORW8CxLY1tGjaI8qyGSOldMilRzEKYGmc7Q6c628S4ED7YafNtp_1lRUn2nVi3IQ7FN7TaKT3bi4a3uwPxJfzNKvwDNAGa8</recordid><startdate>20210128</startdate><enddate>20210128</enddate><creator>Jian, Jiaying</creator><creator>Chang, Honglong</creator><creator>Dong, Pengfan</creator><creator>Bai, Zewen</creator><creator>Zuo, Kangnian</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0400-3658</orcidid><orcidid>https://orcid.org/0000-0002-4369-2022</orcidid></search><sort><creationdate>20210128</creationdate><title>A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2</title><author>Jian, Jiaying ; Chang, Honglong ; Dong, Pengfan ; Bai, Zewen ; Zuo, Kangnian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c995-d05700608ef29bdb1ea841122e8f54773773f21d9147beea8a892653a4e5dbe63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jian, Jiaying</creatorcontrib><creatorcontrib>Chang, Honglong</creatorcontrib><creatorcontrib>Dong, Pengfan</creatorcontrib><creatorcontrib>Bai, Zewen</creatorcontrib><creatorcontrib>Zuo, Kangnian</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jian, Jiaying</au><au>Chang, Honglong</au><au>Dong, Pengfan</au><au>Bai, Zewen</au><au>Zuo, Kangnian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2021-01-28</date><risdate>2021</risdate><volume>11</volume><issue>9</issue><spage>5204</spage><epage>5217</epage><pages>5204-5217</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS
was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS
based photodetector increase from 0.1722 A W
and 10
Jones to 0.2907 A W
and 10
Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS
has been obtained. The criterion for the CVD-grown 2D MoS
to transition from an oxygen-doped state to a pure state has been developed. A mechanism explaining the variation in the photoelectric performance of the CVD-grown 2D MoS
has been proposed. The CVD-grown 2D MoS
and the annealed CVD-grown 2D MoS
are oxygen-doped MoS
while the vulcanized CVD-grown 2D MoS
is pure MoS
. The variation in the photoelectric performance of CVD-grown 2D MoS
results from differences in the O-doping concentration and the bandgap.</abstract><cop>England</cop><pmid>35424465</pmid><doi>10.1039/d0ra10302k</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0003-0400-3658</orcidid><orcidid>https://orcid.org/0000-0002-4369-2022</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2046-2069 |
| ispartof | RSC advances, 2021-01, Vol.11 (9), p.5204-5217 |
| issn | 2046-2069 2046-2069 |
| language | eng |
| recordid | cdi_crossref_primary_10_1039_D0RA10302K |
| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; PubMed Central |
| title | A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS 2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T03%3A13%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pubmed_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20mechanism%20for%20the%20variation%20in%20the%20photoelectric%20performance%20of%20a%20photodetector%20based%20on%20CVD-grown%202D%20MoS%202&rft.jtitle=RSC%20advances&rft.au=Jian,%20Jiaying&rft.date=2021-01-28&rft.volume=11&rft.issue=9&rft.spage=5204&rft.epage=5217&rft.pages=5204-5217&rft.issn=2046-2069&rft.eissn=2046-2069&rft_id=info:doi/10.1039/d0ra10302k&rft_dat=%3Cpubmed_cross%3E35424465%3C/pubmed_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/35424465&rfr_iscdi=true |