Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

Selective deposition of various materials on pre-defined areas on the substrate is of crucial importance nowadays for microelectronic technology. Carbon-based layers, such as self-assembled monolayers and polymerized fluorocarbon etch residues are often used as passivation layers in order to inhibit...

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Veröffentlicht in:	Materials advances 2020-11, Vol.1 (8), p.349-357
Hauptverfasser:	Zyulkov, Ivan, Voronina, Ekaterina, Krishtab, Mikhail, Voloshin, Dmitry, Chan, B. T, Mankelevich, Yuri, Rakhimova, Tatyana, Armini, Silvia, De Gendt, Stefan
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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