Monte Carlo simulation of nanoscale material focused ion beam gas-assisted etching: Ga + and Ne + etching of SiO 2 in the presence of a XeF 2 precursor gas

Elucidating energetic particle-precursor gas–solid interactions is critical to many atomic and nanoscale synthesis approaches. Focused ion beam sputtering and gas-assisted etching are among the more commonly used direct-write nanomachining techniques that have been developed. Here, we demonstrate a...

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Veröffentlicht in:	Nanoscale advances 2019-09, Vol.1 (9), p.3584-3596
Hauptverfasser:	Mahady, Kyle T., Tan, Shida, Greenzweig, Yuval, Raveh, Amir, Rack, Philip D.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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