TlP 5 : an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility
Two-dimensional materials with an appropriate band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer TlP 5 , which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high c...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-01, Vol.7 (3), p.639-644 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 7 |
| creator | Yuan, Jun-Hui Cresti, Alessandro Xue, Kan-Hao Song, Ya-Qian Su, Hai-Lei Li, Li-Heng Miao, Nai-Hua Sun, Zhi-Mei Wang, Jia-Fu Miao, Xiang-Shui |
| description | Two-dimensional materials with an appropriate band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer TlP
5
, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13 960 cm
2
V
−1
s
−1
for electrons and 7560 cm
2
V
−1
s
−1
for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer TlP
5
can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially the balanced high mobilities for not only the electrons but also the holes, make monolayer TlP
5
an exciting functional material for future applications in nanoelectronics and optoelectronics. |
| doi_str_mv | 10.1039/C8TC05164J |
| format | Article |
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5
, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13 960 cm
2
V
−1
s
−1
for electrons and 7560 cm
2
V
−1
s
−1
for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer TlP
5
can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially the balanced high mobilities for not only the electrons but also the holes, make monolayer TlP
5
an exciting functional material for future applications in nanoelectronics and optoelectronics.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/C8TC05164J</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (3), p.639-644</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c146t-5736981e497f6d76ceab981c4ee0938beb4c8e292d1dc41e202ce2f80ab2589d3</citedby><cites>FETCH-LOGICAL-c146t-5736981e497f6d76ceab981c4ee0938beb4c8e292d1dc41e202ce2f80ab2589d3</cites><orcidid>0000-0002-3999-7421 ; 0000-0002-2894-7912 ; 0000-0002-1326-2515 ; 0000-0002-4438-5032</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Yuan, Jun-Hui</creatorcontrib><creatorcontrib>Cresti, Alessandro</creatorcontrib><creatorcontrib>Xue, Kan-Hao</creatorcontrib><creatorcontrib>Song, Ya-Qian</creatorcontrib><creatorcontrib>Su, Hai-Lei</creatorcontrib><creatorcontrib>Li, Li-Heng</creatorcontrib><creatorcontrib>Miao, Nai-Hua</creatorcontrib><creatorcontrib>Sun, Zhi-Mei</creatorcontrib><creatorcontrib>Wang, Jia-Fu</creatorcontrib><creatorcontrib>Miao, Xiang-Shui</creatorcontrib><title>TlP 5 : an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Two-dimensional materials with an appropriate band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer TlP
5
, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13 960 cm
2
V
−1
s
−1
for electrons and 7560 cm
2
V
−1
s
−1
for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer TlP
5
can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially the balanced high mobilities for not only the electrons but also the holes, make monolayer TlP
5
an exciting functional material for future applications in nanoelectronics and optoelectronics.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LxDAURYMoOIyz8Re8tVBN0jRN3EnVURnQRcVlSZPXaaQfQ9Ki8-8dUfRu7j2buziEnDN6yWiqrwpVFjRjUjwdkQWnGU3yLBXHf5vLU7KK8Z0eophUUi_IW9m9QAbXYAaYB_zcdWNAB84HtBPUZnCwNTvgtxCx93Yc3GynMcCHn1qYuymYpPXbFqwJwWOAfqx956f9GTlpTBdx9dtL8np_VxYPyeZ5_VjcbBLLhJySLE-lVgyFzhvpcmnR1Ae2ApHqVNVYC6uQa-6Ys4Ihp9wibxQ1Nc-UdumSXPz82jDGGLCpdsH3JuwrRqtvK9W_lfQLJeJUQw</recordid><startdate>20190117</startdate><enddate>20190117</enddate><creator>Yuan, Jun-Hui</creator><creator>Cresti, Alessandro</creator><creator>Xue, Kan-Hao</creator><creator>Song, Ya-Qian</creator><creator>Su, Hai-Lei</creator><creator>Li, Li-Heng</creator><creator>Miao, Nai-Hua</creator><creator>Sun, Zhi-Mei</creator><creator>Wang, Jia-Fu</creator><creator>Miao, Xiang-Shui</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-3999-7421</orcidid><orcidid>https://orcid.org/0000-0002-2894-7912</orcidid><orcidid>https://orcid.org/0000-0002-1326-2515</orcidid><orcidid>https://orcid.org/0000-0002-4438-5032</orcidid></search><sort><creationdate>20190117</creationdate><title>TlP 5 : an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility</title><author>Yuan, Jun-Hui ; Cresti, Alessandro ; Xue, Kan-Hao ; Song, Ya-Qian ; Su, Hai-Lei ; Li, Li-Heng ; Miao, Nai-Hua ; Sun, Zhi-Mei ; Wang, Jia-Fu ; Miao, Xiang-Shui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c146t-5736981e497f6d76ceab981c4ee0938beb4c8e292d1dc41e202ce2f80ab2589d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yuan, Jun-Hui</creatorcontrib><creatorcontrib>Cresti, Alessandro</creatorcontrib><creatorcontrib>Xue, Kan-Hao</creatorcontrib><creatorcontrib>Song, Ya-Qian</creatorcontrib><creatorcontrib>Su, Hai-Lei</creatorcontrib><creatorcontrib>Li, Li-Heng</creatorcontrib><creatorcontrib>Miao, Nai-Hua</creatorcontrib><creatorcontrib>Sun, Zhi-Mei</creatorcontrib><creatorcontrib>Wang, Jia-Fu</creatorcontrib><creatorcontrib>Miao, Xiang-Shui</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yuan, Jun-Hui</au><au>Cresti, Alessandro</au><au>Xue, Kan-Hao</au><au>Song, Ya-Qian</au><au>Su, Hai-Lei</au><au>Li, Li-Heng</au><au>Miao, Nai-Hua</au><au>Sun, Zhi-Mei</au><au>Wang, Jia-Fu</au><au>Miao, Xiang-Shui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TlP 5 : an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2019-01-17</date><risdate>2019</risdate><volume>7</volume><issue>3</issue><spage>639</spage><epage>644</epage><pages>639-644</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Two-dimensional materials with an appropriate band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer TlP
5
, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13 960 cm
2
V
−1
s
−1
for electrons and 7560 cm
2
V
−1
s
−1
for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer TlP
5
can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially the balanced high mobilities for not only the electrons but also the holes, make monolayer TlP
5
an exciting functional material for future applications in nanoelectronics and optoelectronics.</abstract><doi>10.1039/C8TC05164J</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3999-7421</orcidid><orcidid>https://orcid.org/0000-0002-2894-7912</orcidid><orcidid>https://orcid.org/0000-0002-1326-2515</orcidid><orcidid>https://orcid.org/0000-0002-4438-5032</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-01, Vol.7 (3), p.639-644 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_crossref_primary_10_1039_C8TC05164J |
| source | Royal Society Of Chemistry Journals 2008- |
| title | TlP 5 : an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility |
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