A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications
We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo( p -phenylene vinylene) derivative substituted at both ends with pyrene moie...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-03, Vol.7 (11), p.319-3198 |
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| creator | Ribierre, Jean-Charles Li, Zhao Liu, Xiao Lacaze, Emmanuelle Heinrich, Benoît Méry, Stephane Sleczkowski, Piotr Xiao, Yiming Lafolet, Frédéric Hashizume, Daisuke Aoyama, Tetsuya Uchiyama, Masanobu Wu, Jeong Weon Zaborova, Elena Fages, Frédéric D'Aléo, Anthony Mathevet, Fabrice Adachi, Chihaya |
| description | We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(
p
-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size. |
| doi_str_mv | 10.1039/c8tc04834g |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1039_C8TC04834G</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2191282983</sourcerecordid><originalsourceid>FETCH-LOGICAL-c315t-b2c619f958483c2c0f13bba9737ad119f0ee52a27b190d165014d1898361cec43</originalsourceid><addsrcrecordid>eNpFkUtLxDAUhYsoKOrGvRBwpVDNo49kOQy-YMCNrkt6ezsT6TRjko6Mv8Ufa2plzCbn3nw55OYkyQWjt4wKdQcyAM2kyJYHyQmnOU3LXGSHe82L4-Tc-3cal2SFLNRJ8j0j3nZb7EPaOkSi-4ZsNQzDeqrX2IV04yyg96ZfxjqsbEOCJa2unQEdkFi31L0B4nFtwPbNAGFEO71D58mnCauo3RIJuJ0PuiPefCFprdvfxA4hODtKvdl0o62xvT9LjlrdeTz_20-Tt4f71_lTunh5fJ7PFikIloe05lAw1apcxuGBA22ZqGutSlHqhsUTiphzzcuaKdqwIqcsa5hUUhQMEDJxmlxPvivdVRtn1trtKqtN9TRbVGOPclGUKldbFtmriY2f8jGgD9W7HVwfn1dxphiXPPpG6maiwFnvHbZ7W0arMaxqLl_nv2E9Rvhygp2HPfcfpvgB442TIQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2191282983</pqid></control><display><type>article</type><title>A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Ribierre, Jean-Charles ; Li, Zhao ; Liu, Xiao ; Lacaze, Emmanuelle ; Heinrich, Benoît ; Méry, Stephane ; Sleczkowski, Piotr ; Xiao, Yiming ; Lafolet, Frédéric ; Hashizume, Daisuke ; Aoyama, Tetsuya ; Uchiyama, Masanobu ; Wu, Jeong Weon ; Zaborova, Elena ; Fages, Frédéric ; D'Aléo, Anthony ; Mathevet, Fabrice ; Adachi, Chihaya</creator><creatorcontrib>Ribierre, Jean-Charles ; Li, Zhao ; Liu, Xiao ; Lacaze, Emmanuelle ; Heinrich, Benoît ; Méry, Stephane ; Sleczkowski, Piotr ; Xiao, Yiming ; Lafolet, Frédéric ; Hashizume, Daisuke ; Aoyama, Tetsuya ; Uchiyama, Masanobu ; Wu, Jeong Weon ; Zaborova, Elena ; Fages, Frédéric ; D'Aléo, Anthony ; Mathevet, Fabrice ; Adachi, Chihaya</creatorcontrib><description>We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(
p
-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c8tc04834g</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Chemical Sciences ; Crystal structure ; Crystals ; Current carriers ; Electronic devices ; Field effect transistors ; Light emission ; Material chemistry ; Organic compounds ; Photoluminescence ; Recrystallization ; Semiconductor devices ; Single crystals ; Small angle X ray scattering ; Solvents ; Spin coating ; Spontaneous emission ; Thin films ; X-ray diffraction</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-03, Vol.7 (11), p.319-3198</ispartof><rights>Copyright Royal Society of Chemistry 2019</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-b2c619f958483c2c0f13bba9737ad119f0ee52a27b190d165014d1898361cec43</citedby><cites>FETCH-LOGICAL-c315t-b2c619f958483c2c0f13bba9737ad119f0ee52a27b190d165014d1898361cec43</cites><orcidid>0000-0001-6313-2308 ; 0000-0003-2013-0710 ; 0000-0001-6795-2733 ; 0000-0001-6117-9604 ; 0000-0001-7288-3795 ; 0000-0001-5212-9728 ; 0000-0001-8410-8729 ; 0000-0002-3813-1335 ; 0000-0002-9353-3417 ; 0000-0002-9922-1430 ; 0000-0001-7027-841X ; 0000-0001-6385-5944 ; 0000-0002-8380-8288</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02367959$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Ribierre, Jean-Charles</creatorcontrib><creatorcontrib>Li, Zhao</creatorcontrib><creatorcontrib>Liu, Xiao</creatorcontrib><creatorcontrib>Lacaze, Emmanuelle</creatorcontrib><creatorcontrib>Heinrich, Benoît</creatorcontrib><creatorcontrib>Méry, Stephane</creatorcontrib><creatorcontrib>Sleczkowski, Piotr</creatorcontrib><creatorcontrib>Xiao, Yiming</creatorcontrib><creatorcontrib>Lafolet, Frédéric</creatorcontrib><creatorcontrib>Hashizume, Daisuke</creatorcontrib><creatorcontrib>Aoyama, Tetsuya</creatorcontrib><creatorcontrib>Uchiyama, Masanobu</creatorcontrib><creatorcontrib>Wu, Jeong Weon</creatorcontrib><creatorcontrib>Zaborova, Elena</creatorcontrib><creatorcontrib>Fages, Frédéric</creatorcontrib><creatorcontrib>D'Aléo, Anthony</creatorcontrib><creatorcontrib>Mathevet, Fabrice</creatorcontrib><creatorcontrib>Adachi, Chihaya</creatorcontrib><title>A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(
p
-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size.</description><subject>Chemical Sciences</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Current carriers</subject><subject>Electronic devices</subject><subject>Field effect transistors</subject><subject>Light emission</subject><subject>Material chemistry</subject><subject>Organic compounds</subject><subject>Photoluminescence</subject><subject>Recrystallization</subject><subject>Semiconductor devices</subject><subject>Single crystals</subject><subject>Small angle X ray scattering</subject><subject>Solvents</subject><subject>Spin coating</subject><subject>Spontaneous emission</subject><subject>Thin films</subject><subject>X-ray diffraction</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpFkUtLxDAUhYsoKOrGvRBwpVDNo49kOQy-YMCNrkt6ezsT6TRjko6Mv8Ufa2plzCbn3nw55OYkyQWjt4wKdQcyAM2kyJYHyQmnOU3LXGSHe82L4-Tc-3cal2SFLNRJ8j0j3nZb7EPaOkSi-4ZsNQzDeqrX2IV04yyg96ZfxjqsbEOCJa2unQEdkFi31L0B4nFtwPbNAGFEO71D58mnCauo3RIJuJ0PuiPefCFprdvfxA4hODtKvdl0o62xvT9LjlrdeTz_20-Tt4f71_lTunh5fJ7PFikIloe05lAw1apcxuGBA22ZqGutSlHqhsUTiphzzcuaKdqwIqcsa5hUUhQMEDJxmlxPvivdVRtn1trtKqtN9TRbVGOPclGUKldbFtmriY2f8jGgD9W7HVwfn1dxphiXPPpG6maiwFnvHbZ7W0arMaxqLl_nv2E9Rvhygp2HPfcfpvgB442TIQ</recordid><startdate>20190314</startdate><enddate>20190314</enddate><creator>Ribierre, Jean-Charles</creator><creator>Li, Zhao</creator><creator>Liu, Xiao</creator><creator>Lacaze, Emmanuelle</creator><creator>Heinrich, Benoît</creator><creator>Méry, Stephane</creator><creator>Sleczkowski, Piotr</creator><creator>Xiao, Yiming</creator><creator>Lafolet, Frédéric</creator><creator>Hashizume, Daisuke</creator><creator>Aoyama, Tetsuya</creator><creator>Uchiyama, Masanobu</creator><creator>Wu, Jeong Weon</creator><creator>Zaborova, Elena</creator><creator>Fages, Frédéric</creator><creator>D'Aléo, Anthony</creator><creator>Mathevet, Fabrice</creator><creator>Adachi, Chihaya</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-6313-2308</orcidid><orcidid>https://orcid.org/0000-0003-2013-0710</orcidid><orcidid>https://orcid.org/0000-0001-6795-2733</orcidid><orcidid>https://orcid.org/0000-0001-6117-9604</orcidid><orcidid>https://orcid.org/0000-0001-7288-3795</orcidid><orcidid>https://orcid.org/0000-0001-5212-9728</orcidid><orcidid>https://orcid.org/0000-0001-8410-8729</orcidid><orcidid>https://orcid.org/0000-0002-3813-1335</orcidid><orcidid>https://orcid.org/0000-0002-9353-3417</orcidid><orcidid>https://orcid.org/0000-0002-9922-1430</orcidid><orcidid>https://orcid.org/0000-0001-7027-841X</orcidid><orcidid>https://orcid.org/0000-0001-6385-5944</orcidid><orcidid>https://orcid.org/0000-0002-8380-8288</orcidid></search><sort><creationdate>20190314</creationdate><title>A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications</title><author>Ribierre, Jean-Charles ; Li, Zhao ; Liu, Xiao ; Lacaze, Emmanuelle ; Heinrich, Benoît ; Méry, Stephane ; Sleczkowski, Piotr ; Xiao, Yiming ; Lafolet, Frédéric ; Hashizume, Daisuke ; Aoyama, Tetsuya ; Uchiyama, Masanobu ; Wu, Jeong Weon ; Zaborova, Elena ; Fages, Frédéric ; D'Aléo, Anthony ; Mathevet, Fabrice ; Adachi, Chihaya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-b2c619f958483c2c0f13bba9737ad119f0ee52a27b190d165014d1898361cec43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Chemical Sciences</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Current carriers</topic><topic>Electronic devices</topic><topic>Field effect transistors</topic><topic>Light emission</topic><topic>Material chemistry</topic><topic>Organic compounds</topic><topic>Photoluminescence</topic><topic>Recrystallization</topic><topic>Semiconductor devices</topic><topic>Single crystals</topic><topic>Small angle X ray scattering</topic><topic>Solvents</topic><topic>Spin coating</topic><topic>Spontaneous emission</topic><topic>Thin films</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ribierre, Jean-Charles</creatorcontrib><creatorcontrib>Li, Zhao</creatorcontrib><creatorcontrib>Liu, Xiao</creatorcontrib><creatorcontrib>Lacaze, Emmanuelle</creatorcontrib><creatorcontrib>Heinrich, Benoît</creatorcontrib><creatorcontrib>Méry, Stephane</creatorcontrib><creatorcontrib>Sleczkowski, Piotr</creatorcontrib><creatorcontrib>Xiao, Yiming</creatorcontrib><creatorcontrib>Lafolet, Frédéric</creatorcontrib><creatorcontrib>Hashizume, Daisuke</creatorcontrib><creatorcontrib>Aoyama, Tetsuya</creatorcontrib><creatorcontrib>Uchiyama, Masanobu</creatorcontrib><creatorcontrib>Wu, Jeong Weon</creatorcontrib><creatorcontrib>Zaborova, Elena</creatorcontrib><creatorcontrib>Fages, Frédéric</creatorcontrib><creatorcontrib>D'Aléo, Anthony</creatorcontrib><creatorcontrib>Mathevet, Fabrice</creatorcontrib><creatorcontrib>Adachi, Chihaya</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ribierre, Jean-Charles</au><au>Li, Zhao</au><au>Liu, Xiao</au><au>Lacaze, Emmanuelle</au><au>Heinrich, Benoît</au><au>Méry, Stephane</au><au>Sleczkowski, Piotr</au><au>Xiao, Yiming</au><au>Lafolet, Frédéric</au><au>Hashizume, Daisuke</au><au>Aoyama, Tetsuya</au><au>Uchiyama, Masanobu</au><au>Wu, Jeong Weon</au><au>Zaborova, Elena</au><au>Fages, Frédéric</au><au>D'Aléo, Anthony</au><au>Mathevet, Fabrice</au><au>Adachi, Chihaya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2019-03-14</date><risdate>2019</risdate><volume>7</volume><issue>11</issue><spage>319</spage><epage>3198</epage><pages>319-3198</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size and enhanced charge carrier mobilities. The organic compound used in this work is a solution-processable oligo(
p
-phenylene vinylene) derivative substituted at both ends with pyrene moieties. Accurate control of the temperature during the recrystallization of this compound from the melt enables the formation of large single crystal monodomains in thin films. The melt-processed organic layer shows higher mobilities in transistor configuration than in spin-coated films, which can be attributed to the presence of large-size crystalline monodomains as evidenced by X-ray diffraction measurements. We also investigated the photophysical properties of this material in spin-coated and melted films and found an increase of the photoluminescence quantum yield with the size of the crystals in the organic layer. The advantage of this method over the spin coating also allowed observation of amplified spontaneous emission that was only achieved in the melted film due to its improved luminescence efficiency. Overall, this study demonstrates a simple and versatile method, which does not require the use of any solvent and vacuum, to fabricate organic layers with large crystal size, suitable for the realization of organic electronic and light-emitting devices.
We report on an improved melt-processing method to prepare organic semiconducting layers with large crystal size.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c8tc04834g</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-6313-2308</orcidid><orcidid>https://orcid.org/0000-0003-2013-0710</orcidid><orcidid>https://orcid.org/0000-0001-6795-2733</orcidid><orcidid>https://orcid.org/0000-0001-6117-9604</orcidid><orcidid>https://orcid.org/0000-0001-7288-3795</orcidid><orcidid>https://orcid.org/0000-0001-5212-9728</orcidid><orcidid>https://orcid.org/0000-0001-8410-8729</orcidid><orcidid>https://orcid.org/0000-0002-3813-1335</orcidid><orcidid>https://orcid.org/0000-0002-9353-3417</orcidid><orcidid>https://orcid.org/0000-0002-9922-1430</orcidid><orcidid>https://orcid.org/0000-0001-7027-841X</orcidid><orcidid>https://orcid.org/0000-0001-6385-5944</orcidid><orcidid>https://orcid.org/0000-0002-8380-8288</orcidid></addata></record> |
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| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2019-03, Vol.7 (11), p.319-3198 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_crossref_primary_10_1039_C8TC04834G |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Chemical Sciences Crystal structure Crystals Current carriers Electronic devices Field effect transistors Light emission Material chemistry Organic compounds Photoluminescence Recrystallization Semiconductor devices Single crystals Small angle X ray scattering Solvents Spin coating Spontaneous emission Thin films X-ray diffraction |
| title | A solvent-free and vacuum-free melt-processing method to fabricate organic semiconducting layers with large crystal size for organic electronic applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T10%3A30%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20solvent-free%20and%20vacuum-free%20melt-processing%20method%20to%20fabricate%20organic%20semiconducting%20layers%20with%20large%20crystal%20size%20for%20organic%20electronic%20applications&rft.jtitle=Journal%20of%20materials%20chemistry.%20C,%20Materials%20for%20optical%20and%20electronic%20devices&rft.au=Ribierre,%20Jean-Charles&rft.date=2019-03-14&rft.volume=7&rft.issue=11&rft.spage=319&rft.epage=3198&rft.pages=319-3198&rft.issn=2050-7526&rft.eissn=2050-7534&rft_id=info:doi/10.1039/c8tc04834g&rft_dat=%3Cproquest_cross%3E2191282983%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2191282983&rft_id=info:pmid/&rfr_iscdi=true |