Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precessi...

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Veröffentlicht in:	Nanoscale 2018-11, Vol.1 (44), p.2559-2564
Hauptverfasser:	Chou, C.-T, Jacobson, N. T, Moussa, J. E, Baczewski, A. D, Chuang, Y, Liu, C.-Y, Li, J.-Y, Lu, T. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Crossovers ENGINEERING Field effect transistors Hole density Localization Mean free path Numerical methods Precession Quantum wells Semiconductor devices Spin-orbit interactions Stability Transport
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