The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates

InGaAs is one of the III-V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal-semiconductor junction. A key consideration in many modern devices is the atomic s...

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Veröffentlicht in:	Nanoscale 2018-06, Vol.10 (24), p.11585-11596
Hauptverfasser:	Skopin, Evgeniy V, Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D, Richard, Marie-Ingrid, Renevier, Hubert
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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