Oxygen-induced high diffusion rate of magnesium dopants in GaN/AlGaN based UV LED heterostructures

Further development of GaN/AlGaN based optoelectronic devices requires optimization of the p-type material growth process. In particular, uncontrolled diffusion of Mg dopants may decrease the performance of a device. Thus it is meaningful to study the behavior of Mg and the origins of its diffusion...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2018, Vol.2 (2), p.1389-13895
Hauptverfasser:	Micha owski, Pawe Piotr, Z otnik, Sebastian, Sitek, Jakub, Rosi ski, Krzysztof, Rudzi ski, Mariusz
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Annealing Diffusion length Diffusion rate Dopants Gallium nitrides Heterostructures Inert atmospheres Magnesium Optoelectronic devices Oxygen Secondary ion mass spectrometry
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