Chemical reaction mechanism of ZnO grown using DEZn and N 2 O in MOCVD
ZnO thin films were prepared by metal–organic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and N 2 O. The chemical reaction process of DEZn and N 2 O in the gas phase was studied by density functional theory and computational fluid dynamics calculation. Kinetic and thermodynamic data p...
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| Veröffentlicht in: | CrystEngComm 2018-10, Vol.20 (42), p.6775-6785 |
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| creator | Li, Jian Gan, Hanlin Xu, Yifeng Wang, Chaoyang Pei, Yanli Gu, Feng Long Wang, Gang |
| description | ZnO thin films were prepared by metal–organic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and N
2
O. The chemical reaction process of DEZn and N
2
O in the gas phase was studied by density functional theory and computational fluid dynamics calculation. Kinetic and thermodynamic data provide a better understanding of the ZnO deposition process. The deposition rate of ZnO in the reaction chamber was simulated by kinetic parameters, and the dependence of the film growth rate on temperature was demonstrated. The maximum ZnO film growth rate was at 973–1273 K when grown using DEZn and N
2
O in a high-speed rotating horizontal chamber. When the temperature exceeded 1273 K, the parasitic reaction led to a rapid decline in the ZnO deposition rate. In addition, multi-component migration and chemical reaction were analyzed, and the complete mechanism of DEZn and N
2
O in the reaction chamber was given. |
| doi_str_mv | 10.1039/C8CE01310A |
| format | Article |
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2
O. The chemical reaction process of DEZn and N
2
O in the gas phase was studied by density functional theory and computational fluid dynamics calculation. Kinetic and thermodynamic data provide a better understanding of the ZnO deposition process. The deposition rate of ZnO in the reaction chamber was simulated by kinetic parameters, and the dependence of the film growth rate on temperature was demonstrated. The maximum ZnO film growth rate was at 973–1273 K when grown using DEZn and N
2
O in a high-speed rotating horizontal chamber. When the temperature exceeded 1273 K, the parasitic reaction led to a rapid decline in the ZnO deposition rate. In addition, multi-component migration and chemical reaction were analyzed, and the complete mechanism of DEZn and N
2
O in the reaction chamber was given.</description><identifier>ISSN: 1466-8033</identifier><identifier>EISSN: 1466-8033</identifier><identifier>DOI: 10.1039/C8CE01310A</identifier><language>eng</language><ispartof>CrystEngComm, 2018-10, Vol.20 (42), p.6775-6785</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76A-4da69dfef3ebf2993b7748c437079f484159807e5e941947ae5a9ff9b2f4f6f3</citedby><cites>FETCH-LOGICAL-c76A-4da69dfef3ebf2993b7748c437079f484159807e5e941947ae5a9ff9b2f4f6f3</cites><orcidid>0000-0002-6033-2141 ; 0000-0002-8141-6774 ; 0000-0001-9674-0334</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Li, Jian</creatorcontrib><creatorcontrib>Gan, Hanlin</creatorcontrib><creatorcontrib>Xu, Yifeng</creatorcontrib><creatorcontrib>Wang, Chaoyang</creatorcontrib><creatorcontrib>Pei, Yanli</creatorcontrib><creatorcontrib>Gu, Feng Long</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><title>Chemical reaction mechanism of ZnO grown using DEZn and N 2 O in MOCVD</title><title>CrystEngComm</title><description>ZnO thin films were prepared by metal–organic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and N
2
O. The chemical reaction process of DEZn and N
2
O in the gas phase was studied by density functional theory and computational fluid dynamics calculation. Kinetic and thermodynamic data provide a better understanding of the ZnO deposition process. The deposition rate of ZnO in the reaction chamber was simulated by kinetic parameters, and the dependence of the film growth rate on temperature was demonstrated. The maximum ZnO film growth rate was at 973–1273 K when grown using DEZn and N
2
O in a high-speed rotating horizontal chamber. When the temperature exceeded 1273 K, the parasitic reaction led to a rapid decline in the ZnO deposition rate. In addition, multi-component migration and chemical reaction were analyzed, and the complete mechanism of DEZn and N
2
O in the reaction chamber was given.</description><issn>1466-8033</issn><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpNj0FLwzAYQIMoOKcXf8F3FqpJkzbNsWTdFDZ7UDzsUtI03xZZU0kU8d-LKLjTe6cHj5BrRm8Z5epOV7qhjDNan5AZE2WZVZTz0yM_JxcpvVLKBGN0RpZ670ZvzQGiM_bdTwFGZ_cm-DTChLANLezi9BngI_mwg0WzDWDCAI-QQws-wKbVL4tLcobmkNzVH-fkadk86_ts3a4edL3OrCzrTAymVAM65K7HXCneSykqK7ikUqGoBCtURaUrnBJMCWlcYRSi6nMUWCKfk5vfqo1TStFh9xb9aOJXx2j389_9__NvnxxKpQ</recordid><startdate>20181029</startdate><enddate>20181029</enddate><creator>Li, Jian</creator><creator>Gan, Hanlin</creator><creator>Xu, Yifeng</creator><creator>Wang, Chaoyang</creator><creator>Pei, Yanli</creator><creator>Gu, Feng Long</creator><creator>Wang, Gang</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-6033-2141</orcidid><orcidid>https://orcid.org/0000-0002-8141-6774</orcidid><orcidid>https://orcid.org/0000-0001-9674-0334</orcidid></search><sort><creationdate>20181029</creationdate><title>Chemical reaction mechanism of ZnO grown using DEZn and N 2 O in MOCVD</title><author>Li, Jian ; Gan, Hanlin ; Xu, Yifeng ; Wang, Chaoyang ; Pei, Yanli ; Gu, Feng Long ; Wang, Gang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76A-4da69dfef3ebf2993b7748c437079f484159807e5e941947ae5a9ff9b2f4f6f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Jian</creatorcontrib><creatorcontrib>Gan, Hanlin</creatorcontrib><creatorcontrib>Xu, Yifeng</creatorcontrib><creatorcontrib>Wang, Chaoyang</creatorcontrib><creatorcontrib>Pei, Yanli</creatorcontrib><creatorcontrib>Gu, Feng Long</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><collection>CrossRef</collection><jtitle>CrystEngComm</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Jian</au><au>Gan, Hanlin</au><au>Xu, Yifeng</au><au>Wang, Chaoyang</au><au>Pei, Yanli</au><au>Gu, Feng Long</au><au>Wang, Gang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical reaction mechanism of ZnO grown using DEZn and N 2 O in MOCVD</atitle><jtitle>CrystEngComm</jtitle><date>2018-10-29</date><risdate>2018</risdate><volume>20</volume><issue>42</issue><spage>6775</spage><epage>6785</epage><pages>6775-6785</pages><issn>1466-8033</issn><eissn>1466-8033</eissn><abstract>ZnO thin films were prepared by metal–organic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and N
2
O. The chemical reaction process of DEZn and N
2
O in the gas phase was studied by density functional theory and computational fluid dynamics calculation. Kinetic and thermodynamic data provide a better understanding of the ZnO deposition process. The deposition rate of ZnO in the reaction chamber was simulated by kinetic parameters, and the dependence of the film growth rate on temperature was demonstrated. The maximum ZnO film growth rate was at 973–1273 K when grown using DEZn and N
2
O in a high-speed rotating horizontal chamber. When the temperature exceeded 1273 K, the parasitic reaction led to a rapid decline in the ZnO deposition rate. In addition, multi-component migration and chemical reaction were analyzed, and the complete mechanism of DEZn and N
2
O in the reaction chamber was given.</abstract><doi>10.1039/C8CE01310A</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-6033-2141</orcidid><orcidid>https://orcid.org/0000-0002-8141-6774</orcidid><orcidid>https://orcid.org/0000-0001-9674-0334</orcidid></addata></record> |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Chemical reaction mechanism of ZnO grown using DEZn and N 2 O in MOCVD |
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