Atomic layer deposition of diisopropylaminosilane on WO 3 (001) and W(110): a density functional theory study

The decomposition reactions of the Si precursor, diisopropylaminosilane (DIPAS), on W(110) and hydroxylated WO (001) surfaces are investigated to elucidate the initial reaction mechanism of the atomic layer deposition (ALD) process using density functional theory (DFT) calculations combined with ab...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2016-10, Vol.18 (42), p.29139-29146
Hauptverfasser:	Lee, Kyungtae, Lee, Woojin, Lee, Hyo Sug, Shin, Jaikwang, Park, Jieun, Lee, Seongsuk, Choi, Samjong, Kim, Sueryeon, Kim, Jinseong, Shim, Youngseon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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