Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications
Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher comp...
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Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2016, Vol.18 (9), p.6722-6728 |
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creator | Zhu, Changqiong Panzer, Matthew J. |
description | Impurities at the surface of electrodeposited p-Cu
2
O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu
2
O homojunction photovoltaic devices incorporating etched p-Cu
2
O as the bottom layer is higher compared to devices with as-deposited p-Cu
2
O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu
2
O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values. |
doi_str_mv | 10.1039/C5CP06385J |
format | Article |
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2
O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu
2
O homojunction photovoltaic devices incorporating etched p-Cu
2
O as the bottom layer is higher compared to devices with as-deposited p-Cu
2
O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu
2
O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/C5CP06385J</identifier><language>eng</language><ispartof>Physical chemistry chemical physics : PCCP, 2016, Vol.18 (9), p.6722-6728</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</citedby><cites>FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhu, Changqiong</creatorcontrib><creatorcontrib>Panzer, Matthew J.</creatorcontrib><title>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</title><title>Physical chemistry chemical physics : PCCP</title><description>Impurities at the surface of electrodeposited p-Cu
2
O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu
2
O homojunction photovoltaic devices incorporating etched p-Cu
2
O as the bottom layer is higher compared to devices with as-deposited p-Cu
2
O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu
2
O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</description><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLxDAYRIMouK5e_AU5C9WkadLkKGV1XRbWw16lfEkTN5I2JWkF_70URU8zMI85PIRuKbmnhKmHhjevRDDJd2doRSvBCkVkdf7Xa3GJrnL-IIRQTtkKvW0mc_LDO44O22DNlGJnx5j9ZDvczLjEB-x86DOe84JB38fBA84xzJOPA3Yx4fEUp_gZwwTeYBjH4A0sY75GFw5Ctje_uUbHp82x2Rb7w_NL87gvTC12hSaqVDVIyyWjUlnluBKaaeqsFJpTqktT6dqA1Ao0gYpRzbkredl1pQVga3T3c2tSzDlZ147J95C-WkraxUv774V9A4m3Vv8</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Zhu, Changqiong</creator><creator>Panzer, Matthew J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2016</creationdate><title>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</title><author>Zhu, Changqiong ; Panzer, Matthew J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Changqiong</creatorcontrib><creatorcontrib>Panzer, Matthew J.</creatorcontrib><collection>CrossRef</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Changqiong</au><au>Panzer, Matthew J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><date>2016</date><risdate>2016</risdate><volume>18</volume><issue>9</issue><spage>6722</spage><epage>6728</epage><pages>6722-6728</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>Impurities at the surface of electrodeposited p-Cu
2
O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu
2
O homojunction photovoltaic devices incorporating etched p-Cu
2
O as the bottom layer is higher compared to devices with as-deposited p-Cu
2
O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu
2
O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</abstract><doi>10.1039/C5CP06385J</doi><tpages>7</tpages></addata></record> |
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ispartof | Physical chemistry chemical physics : PCCP, 2016, Vol.18 (9), p.6722-6728 |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
title | Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications |
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