Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications

Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher comp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical chemistry chemical physics : PCCP 2016, Vol.18 (9), p.6722-6728
Hauptverfasser: Zhu, Changqiong, Panzer, Matthew J.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 6728
container_issue 9
container_start_page 6722
container_title Physical chemistry chemical physics : PCCP
container_volume 18
creator Zhu, Changqiong
Panzer, Matthew J.
description Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher compared to devices with as-deposited p-Cu 2 O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu 2 O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.
doi_str_mv 10.1039/C5CP06385J
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_C5CP06385J</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_C5CP06385J</sourcerecordid><originalsourceid>FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</originalsourceid><addsrcrecordid>eNpFkEFLxDAYRIMouK5e_AU5C9WkadLkKGV1XRbWw16lfEkTN5I2JWkF_70URU8zMI85PIRuKbmnhKmHhjevRDDJd2doRSvBCkVkdf7Xa3GJrnL-IIRQTtkKvW0mc_LDO44O22DNlGJnx5j9ZDvczLjEB-x86DOe84JB38fBA84xzJOPA3Yx4fEUp_gZwwTeYBjH4A0sY75GFw5Ctje_uUbHp82x2Rb7w_NL87gvTC12hSaqVDVIyyWjUlnluBKaaeqsFJpTqktT6dqA1Ao0gYpRzbkredl1pQVga3T3c2tSzDlZ147J95C-WkraxUv774V9A4m3Vv8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Zhu, Changqiong ; Panzer, Matthew J.</creator><creatorcontrib>Zhu, Changqiong ; Panzer, Matthew J.</creatorcontrib><description>Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher compared to devices with as-deposited p-Cu 2 O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu 2 O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/C5CP06385J</identifier><language>eng</language><ispartof>Physical chemistry chemical physics : PCCP, 2016, Vol.18 (9), p.6722-6728</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</citedby><cites>FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,4010,27900,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhu, Changqiong</creatorcontrib><creatorcontrib>Panzer, Matthew J.</creatorcontrib><title>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</title><title>Physical chemistry chemical physics : PCCP</title><description>Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher compared to devices with as-deposited p-Cu 2 O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu 2 O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</description><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLxDAYRIMouK5e_AU5C9WkadLkKGV1XRbWw16lfEkTN5I2JWkF_70URU8zMI85PIRuKbmnhKmHhjevRDDJd2doRSvBCkVkdf7Xa3GJrnL-IIRQTtkKvW0mc_LDO44O22DNlGJnx5j9ZDvczLjEB-x86DOe84JB38fBA84xzJOPA3Yx4fEUp_gZwwTeYBjH4A0sY75GFw5Ctje_uUbHp82x2Rb7w_NL87gvTC12hSaqVDVIyyWjUlnluBKaaeqsFJpTqktT6dqA1Ao0gYpRzbkredl1pQVga3T3c2tSzDlZ147J95C-WkraxUv774V9A4m3Vv8</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Zhu, Changqiong</creator><creator>Panzer, Matthew J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2016</creationdate><title>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</title><author>Zhu, Changqiong ; Panzer, Matthew J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76J-b09297a8e583189e9f596b3b1fe86b511b2c4b7ca8b9ab0a431b55f252dd2eaa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhu, Changqiong</creatorcontrib><creatorcontrib>Panzer, Matthew J.</creatorcontrib><collection>CrossRef</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhu, Changqiong</au><au>Panzer, Matthew J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><date>2016</date><risdate>2016</risdate><volume>18</volume><issue>9</issue><spage>6722</spage><epage>6728</epage><pages>6722-6728</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>Impurities at the surface of electrodeposited p-Cu 2 O films have been efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of the Cu 2 O homojunction photovoltaic devices incorporating etched p-Cu 2 O as the bottom layer is higher compared to devices with as-deposited p-Cu 2 O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers led to larger open circuit voltages. The ammonia etchant has been found to preferentially interact with the {100} facets of Cu 2 O and expose a greater number of {111} facets, resulting in increased interface area for etched homojunction devices, which also improved short circuit current density values.</abstract><doi>10.1039/C5CP06385J</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1463-9076
ispartof Physical chemistry chemical physics : PCCP, 2016, Vol.18 (9), p.6722-6728
issn 1463-9076
1463-9084
language eng
recordid cdi_crossref_primary_10_1039_C5CP06385J
source Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection
title Etching of electrodeposited Cu 2 O films using ammonia solution for photovoltaic applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T12%3A34%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Etching%20of%20electrodeposited%20Cu%202%20O%20films%20using%20ammonia%20solution%20for%20photovoltaic%20applications&rft.jtitle=Physical%20chemistry%20chemical%20physics%20:%20PCCP&rft.au=Zhu,%20Changqiong&rft.date=2016&rft.volume=18&rft.issue=9&rft.spage=6722&rft.epage=6728&rft.pages=6722-6728&rft.issn=1463-9076&rft.eissn=1463-9084&rft_id=info:doi/10.1039/C5CP06385J&rft_dat=%3Ccrossref%3E10_1039_C5CP06385J%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true