Syntheses, structures, and optical properties of Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11
Two new quaternary selenides, namely Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11 , have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba 4 Ga 4 SnSe 12 crystallizes in the non-centrosymmetric spac...
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Veröffentlicht in: | Dalton transactions : an international journal of inorganic chemistry 2015, Vol.44 (5), p.2259-2266 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Two new quaternary selenides, namely Ba
4
Ga
4
SnSe
12
and Ba
6
Ga
2
SnSe
11
, have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba
4
Ga
4
SnSe
12
crystallizes in the non-centrosymmetric space group
P
4̄2
1
/
c
of the tetragonal system and has a three-dimensional structure. Its three-dimensional framework is built up from corner-sharing GaSe
4
and SnSe
4
tetrahedra with eight-coordinated Ba
2+
cations residing in the cavities. Ba
6
Ga
2
SnSe
11
crystallizes in a new structure type in the monoclinic centrosymmetric space group
P
2
1
/
c
. The structure of Ba
6
Ga
2
SnSe
11
features a zero-dimensional structure containing totally isolated distorted SnSe
4
tetrahedra and a discrete Ga
2
Se
7
unit with Ba
2+
cations located between them. On the basis of the diffuse-reflectance spectra, the band gaps are 2.16 (2) eV and 1.99 (2) eV for Ba
4
Ga
4
SnSe
12
and Ba
6
Ga
2
SnSe
11
respectively. In addition, the electronic structure calculation of Ba
4
Ga
4
SnSe
12
indicates that it is a direct-gap semiconductor with the band gap mainly determined by the [Ga
4
SnSe
12
]
8−
anionic framework. |
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ISSN: | 1477-9226 1477-9234 |
DOI: | 10.1039/C4DT02244K |