Syntheses, structures, and optical properties of Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11

Two new quaternary selenides, namely Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11 , have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba 4 Ga 4 SnSe 12 crystallizes in the non-centrosymmetric spac...

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Veröffentlicht in:Dalton transactions : an international journal of inorganic chemistry 2015, Vol.44 (5), p.2259-2266
Hauptverfasser: Yin, Wenlong, Lin, Zuohong, Kang, Lei, Kang, Bin, Deng, Jianguo, Lin, Zheshuai, Yao, Jiyong, Wu, Yicheng
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Sprache:eng
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Zusammenfassung:Two new quaternary selenides, namely Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11 , have been synthesized for the first time, representing the first two members in the A/M/Sn/Q (A = alkaline-earth metal; M = Al, Ga, In; Q = S, Se, Te) system. Ba 4 Ga 4 SnSe 12 crystallizes in the non-centrosymmetric space group P 4̄2 1 / c of the tetragonal system and has a three-dimensional structure. Its three-dimensional framework is built up from corner-sharing GaSe 4 and SnSe 4 tetrahedra with eight-coordinated Ba 2+ cations residing in the cavities. Ba 6 Ga 2 SnSe 11 crystallizes in a new structure type in the monoclinic centrosymmetric space group P 2 1 / c . The structure of Ba 6 Ga 2 SnSe 11 features a zero-dimensional structure containing totally isolated distorted SnSe 4 tetrahedra and a discrete Ga 2 Se 7 unit with Ba 2+ cations located between them. On the basis of the diffuse-reflectance spectra, the band gaps are 2.16 (2) eV and 1.99 (2) eV for Ba 4 Ga 4 SnSe 12 and Ba 6 Ga 2 SnSe 11 respectively. In addition, the electronic structure calculation of Ba 4 Ga 4 SnSe 12 indicates that it is a direct-gap semiconductor with the band gap mainly determined by the [Ga 4 SnSe 12 ] 8− anionic framework.
ISSN:1477-9226
1477-9234
DOI:10.1039/C4DT02244K