Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics
The bulk conductivity at room temperature of Ca-doped BiFeO 3 ceramics is p-type and increases reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range ∼3 to 20 V mm −1 . The effect occurs in both grain and grain boundary regions, is isotropic and does no...
Gespeichert in:
| Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2014, Vol.16 (36), p.19408-19416 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 19416 |
|---|---|
| container_issue | 36 |
| container_start_page | 19408 |
| container_title | Physical chemistry chemical physics : PCCP |
| container_volume | 16 |
| creator | Masó, Nahum Beltrán, Héctor Prades, Marta Cordoncillo, Eloisa West, Anthony R. |
| description | The bulk conductivity at room temperature of Ca-doped BiFeO
3
ceramics is p-type and increases reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range ∼3 to 20 V mm
−1
. The effect occurs in both grain and grain boundary regions, is isotropic and does not involve creation of filamentary conduction pathways. It is proposed that, by means of capacitive charging and internal ionisation processes under the action of a dc bias, hole creation leads to a more conductive excited state. This gradually returns to the ground state when the dc bias is removed and the holes recombine with electrons trapped at the sample surface. The holes are believed to be created on oxygen, as O
−
ions. |
| doi_str_mv | 10.1039/C4CP02580F |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_C4CP02580F</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_C4CP02580F</sourcerecordid><originalsourceid>FETCH-LOGICAL-c76F-1e6316b3e7d694bf18b231fb0a6ead184ba5d9b78f6b002f371eb0d5b71232d3</originalsourceid><addsrcrecordid>eNpFkE1LxDAURYMoOI5u_AVZC9H3mjZpl1qsCgMjqOuSj1cn2kmHpqPMv3dE0dW9d3Hu4jB2jnCJIKurOq8fIStKaA7YDHMlRQVlfvjXtTpmJym9AQAWKGfspQnUe0FxZaIjz-22f-duiH7rpvARph030fORUkj7TSJ9hsmtQnzlIfLaCD9s9tRNaGjJJXc0mnVw6ZQddaZPdPabc_bU3D7X92KxvHuorxfCadUIJCVRWUnaqyq3HZY2k9hZMIqMxzK3pvCV1WWnLEDWSY1kwRdWYyYzL-fs4ufVjUNKI3XtZgxrM-5ahPZbR_uvQ34Blz1Scw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Masó, Nahum ; Beltrán, Héctor ; Prades, Marta ; Cordoncillo, Eloisa ; West, Anthony R.</creator><creatorcontrib>Masó, Nahum ; Beltrán, Héctor ; Prades, Marta ; Cordoncillo, Eloisa ; West, Anthony R.</creatorcontrib><description>The bulk conductivity at room temperature of Ca-doped BiFeO
3
ceramics is p-type and increases reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range ∼3 to 20 V mm
−1
. The effect occurs in both grain and grain boundary regions, is isotropic and does not involve creation of filamentary conduction pathways. It is proposed that, by means of capacitive charging and internal ionisation processes under the action of a dc bias, hole creation leads to a more conductive excited state. This gradually returns to the ground state when the dc bias is removed and the holes recombine with electrons trapped at the sample surface. The holes are believed to be created on oxygen, as O
−
ions.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/C4CP02580F</identifier><language>eng</language><ispartof>Physical chemistry chemical physics : PCCP, 2014, Vol.16 (36), p.19408-19416</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76F-1e6316b3e7d694bf18b231fb0a6ead184ba5d9b78f6b002f371eb0d5b71232d3</citedby><cites>FETCH-LOGICAL-c76F-1e6316b3e7d694bf18b231fb0a6ead184ba5d9b78f6b002f371eb0d5b71232d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4022,27922,27923,27924</link.rule.ids></links><search><creatorcontrib>Masó, Nahum</creatorcontrib><creatorcontrib>Beltrán, Héctor</creatorcontrib><creatorcontrib>Prades, Marta</creatorcontrib><creatorcontrib>Cordoncillo, Eloisa</creatorcontrib><creatorcontrib>West, Anthony R.</creatorcontrib><title>Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics</title><title>Physical chemistry chemical physics : PCCP</title><description>The bulk conductivity at room temperature of Ca-doped BiFeO
3
ceramics is p-type and increases reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range ∼3 to 20 V mm
−1
. The effect occurs in both grain and grain boundary regions, is isotropic and does not involve creation of filamentary conduction pathways. It is proposed that, by means of capacitive charging and internal ionisation processes under the action of a dc bias, hole creation leads to a more conductive excited state. This gradually returns to the ground state when the dc bias is removed and the holes recombine with electrons trapped at the sample surface. The holes are believed to be created on oxygen, as O
−
ions.</description><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkE1LxDAURYMoOI5u_AVZC9H3mjZpl1qsCgMjqOuSj1cn2kmHpqPMv3dE0dW9d3Hu4jB2jnCJIKurOq8fIStKaA7YDHMlRQVlfvjXtTpmJym9AQAWKGfspQnUe0FxZaIjz-22f-duiH7rpvARph030fORUkj7TSJ9hsmtQnzlIfLaCD9s9tRNaGjJJXc0mnVw6ZQddaZPdPabc_bU3D7X92KxvHuorxfCadUIJCVRWUnaqyq3HZY2k9hZMIqMxzK3pvCV1WWnLEDWSY1kwRdWYyYzL-fs4ufVjUNKI3XtZgxrM-5ahPZbR_uvQ34Blz1Scw</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Masó, Nahum</creator><creator>Beltrán, Héctor</creator><creator>Prades, Marta</creator><creator>Cordoncillo, Eloisa</creator><creator>West, Anthony R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2014</creationdate><title>Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics</title><author>Masó, Nahum ; Beltrán, Héctor ; Prades, Marta ; Cordoncillo, Eloisa ; West, Anthony R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76F-1e6316b3e7d694bf18b231fb0a6ead184ba5d9b78f6b002f371eb0d5b71232d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Masó, Nahum</creatorcontrib><creatorcontrib>Beltrán, Héctor</creatorcontrib><creatorcontrib>Prades, Marta</creatorcontrib><creatorcontrib>Cordoncillo, Eloisa</creatorcontrib><creatorcontrib>West, Anthony R.</creatorcontrib><collection>CrossRef</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Masó, Nahum</au><au>Beltrán, Héctor</au><au>Prades, Marta</au><au>Cordoncillo, Eloisa</au><au>West, Anthony R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><date>2014</date><risdate>2014</risdate><volume>16</volume><issue>36</issue><spage>19408</spage><epage>19416</epage><pages>19408-19416</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>The bulk conductivity at room temperature of Ca-doped BiFeO
3
ceramics is p-type and increases reversibly by up to 3 orders of magnitude under the influence of a small dc bias voltage in the range ∼3 to 20 V mm
−1
. The effect occurs in both grain and grain boundary regions, is isotropic and does not involve creation of filamentary conduction pathways. It is proposed that, by means of capacitive charging and internal ionisation processes under the action of a dc bias, hole creation leads to a more conductive excited state. This gradually returns to the ground state when the dc bias is removed and the holes recombine with electrons trapped at the sample surface. The holes are believed to be created on oxygen, as O
−
ions.</abstract><doi>10.1039/C4CP02580F</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1463-9076 |
| ispartof | Physical chemistry chemical physics : PCCP, 2014, Vol.16 (36), p.19408-19416 |
| issn | 1463-9076 1463-9084 |
| language | eng |
| recordid | cdi_crossref_primary_10_1039_C4CP02580F |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Field-enhanced bulk conductivity and resistive-switching in Ca-doped BiFeO 3 ceramics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T04%3A36%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Field-enhanced%20bulk%20conductivity%20and%20resistive-switching%20in%20Ca-doped%20BiFeO%203%20ceramics&rft.jtitle=Physical%20chemistry%20chemical%20physics%20:%20PCCP&rft.au=Mas%C3%B3,%20Nahum&rft.date=2014&rft.volume=16&rft.issue=36&rft.spage=19408&rft.epage=19416&rft.pages=19408-19416&rft.issn=1463-9076&rft.eissn=1463-9084&rft_id=info:doi/10.1039/C4CP02580F&rft_dat=%3Ccrossref%3E10_1039_C4CP02580F%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |