Electrical engineering of topological magnetism in two-dimensional heterobilayers

The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials and their heterostructures is an essential ingredient for next-generation information technology devices. Here, we demonstrate the all-electric switching of the topological nature of individual magn...

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Veröffentlicht in:Npj spintronics 2024-05, Vol.2 (1), Article 10
Hauptverfasser: Abuawwad, Nihad, dos Santos Dias, Manuel, Abusara, Hazem, Lounis, Samir
Format: Artikel
Sprache:eng
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Zusammenfassung:The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials and their heterostructures is an essential ingredient for next-generation information technology devices. Here, we demonstrate the all-electric switching of the topological nature of individual magnetic objects emerging in 2D vdW heterobilayers. We show from the first principles that an external electric field modifies the vdW gap between CrTe 2 and (Rh, Ti)Te 2 layers and alters the underlying magnetic interactions. This enables switching between ferromagnetic skyrmions and meron pairs in the CrTe 2 /RhTe 2 heterobilayer while it enhances the stability of frustrated antiferromagnetic merons in the CrTe 2 /TiTe 2 heterobilayer. We envision that the electrical engineering of distinct topological magnetic solitons in a single device could pave the way for novel energy-efficient mechanisms to store and transmit information with applications in spintronics.
ISSN:2948-2119
2948-2119
DOI:10.1038/s44306-024-00015-6