High Performance Silicon Nanowire Field Effect Transistors

Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon n...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Nano letters 2003-02, Vol.3 (2), p.149-152
Hauptverfasser:	Cui, Yi, Zhong, Zhaohui, Wang, Deli, Wang, Wayne U, Lieber, Charles M
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Molecular electronics, nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!