Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities

We have prepared noncollapsed free-standing porous silicon (PS) films with various porosities even higher than 90% using the electrochemical etching−electropolishing, chemical dissolving, and supercritical drying methods. The result of a study combining optical absorption and photoluminescence (PL)...

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Veröffentlicht in:	Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical Surfaces, Interfaces, amp Biophysical, 1999-07, Vol.103 (26), p.5468-5471
Hauptverfasser:	Xu, Dongsheng, Guo, Guolin, Gui, Linlin, Tang, Youqi, Zhang, B. R, Qin, G. G
Format:	Artikel
Sprache:	eng
Schlagworte:	40 CHEMISTRY ABSORPTION MATERIALS SCIENCE PARTICLES PHOTOLUMINESCENCE POROSITY POROUS MATERIALS SILICON
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container_end_page	5471
container_issue	26
container_start_page	5468
container_title	Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical
container_volume	103
creator	Xu, Dongsheng Guo, Guolin Gui, Linlin Tang, Youqi Zhang, B. R Qin, G. G
description	We have prepared noncollapsed free-standing porous silicon (PS) films with various porosities even higher than 90% using the electrochemical etching−electropolishing, chemical dissolving, and supercritical drying methods. The result of a study combining optical absorption and photoluminescence (PL) from free-standing PS films with porosities in the range 41−94% is presented. A blue shift of the transmission curves and an increase of the PL intensity with enhancing porosity have been observed. However, no notable blue shift of the PL peak position with increasing porosity has been observed. Furthermore, the square root of the absorption coefficient (α) of the PS samples with high porosities times photon energy (hν) vs photon energy can no longer be fitted by a linear function. Even for PS films with porosity of 94%, the absorption data do not show that the nanometer Si particles in the PS have a direct energy gap.
doi_str_mv	10.1021/jp990519l
format	Article
fullrecord	<record><control><sourceid>istex_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1021_jp990519l</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_TPS_2DRCR2TZ_B</sourcerecordid><originalsourceid>FETCH-LOGICAL-a321t-fa00ca8f57dd58ffffecb8905c50a968069da793f0ff0a373ae3ffc44669005e3</originalsourceid><addsrcrecordid>eNptkMFOwzAMhiMEEmNw4A3CgQOHgtOuaXscgzGkSZvWceESZWmyZeuaKUkFvD2Bop2wZNmSP_-yf4SuCdwTiMnD9lAUkJKiPkE9ksYQhcxO_3pKgJ6jC-e2AHEa57SHdrOD14LXeLhyxobeNJg3FZ5vjDd1u9eNdEI2QuLSt5WWDhuFx1bKqPSB080az401rcOlrrUI22Nd7x3-0H6DJ3q9-R077cPqJTpTvHby6q_20dv4eTmaRNPZy-toOI14EhMfKQ4geK7SrKrSXIWQYpWHr0QKvKA50KLiWZEoUAp4kiVcJkqJwYDSAiCVSR_ddLrGec2c0F6KTTitkcIzmgdDssDcdYwI1zkrFTtYvef2ixFgP06yo5OBjTpWOy8_jyC3O0azJEvZcl6y-GkxWsTLd_YY-NuO58KxrWltE779R_cbSk6Ddg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities</title><source>ACS Publications</source><creator>Xu, Dongsheng ; Guo, Guolin ; Gui, Linlin ; Tang, Youqi ; Zhang, B. R ; Qin, G. G</creator><creatorcontrib>Xu, Dongsheng ; Guo, Guolin ; Gui, Linlin ; Tang, Youqi ; Zhang, B. R ; Qin, G. G</creatorcontrib><description>We have prepared noncollapsed free-standing porous silicon (PS) films with various porosities even higher than 90% using the electrochemical etching−electropolishing, chemical dissolving, and supercritical drying methods. The result of a study combining optical absorption and photoluminescence (PL) from free-standing PS films with porosities in the range 41−94% is presented. A blue shift of the transmission curves and an increase of the PL intensity with enhancing porosity have been observed. However, no notable blue shift of the PL peak position with increasing porosity has been observed. Furthermore, the square root of the absorption coefficient (α) of the PS samples with high porosities times photon energy (hν) vs photon energy can no longer be fitted by a linear function. Even for PS films with porosity of 94%, the absorption data do not show that the nanometer Si particles in the PS have a direct energy gap.</description><identifier>ISSN: 1520-6106</identifier><identifier>EISSN: 1520-5207</identifier><identifier>DOI: 10.1021/jp990519l</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>40 CHEMISTRY ; ABSORPTION ; MATERIALS SCIENCE ; PARTICLES ; PHOTOLUMINESCENCE ; POROSITY ; POROUS MATERIALS ; SILICON</subject><ispartof>Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical, 1999-07, Vol.103 (26), p.5468-5471</ispartof><rights>Copyright © 1999 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a321t-fa00ca8f57dd58ffffecb8905c50a968069da793f0ff0a373ae3ffc44669005e3</citedby><cites>FETCH-LOGICAL-a321t-fa00ca8f57dd58ffffecb8905c50a968069da793f0ff0a373ae3ffc44669005e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jp990519l$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jp990519l$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,881,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/682077$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Xu, Dongsheng</creatorcontrib><creatorcontrib>Guo, Guolin</creatorcontrib><creatorcontrib>Gui, Linlin</creatorcontrib><creatorcontrib>Tang, Youqi</creatorcontrib><creatorcontrib>Zhang, B. R</creatorcontrib><creatorcontrib>Qin, G. G</creatorcontrib><title>Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities</title><title>Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical</title><addtitle>J. Phys. Chem. B</addtitle><description>We have prepared noncollapsed free-standing porous silicon (PS) films with various porosities even higher than 90% using the electrochemical etching−electropolishing, chemical dissolving, and supercritical drying methods. The result of a study combining optical absorption and photoluminescence (PL) from free-standing PS films with porosities in the range 41−94% is presented. A blue shift of the transmission curves and an increase of the PL intensity with enhancing porosity have been observed. However, no notable blue shift of the PL peak position with increasing porosity has been observed. Furthermore, the square root of the absorption coefficient (α) of the PS samples with high porosities times photon energy (hν) vs photon energy can no longer be fitted by a linear function. Even for PS films with porosity of 94%, the absorption data do not show that the nanometer Si particles in the PS have a direct energy gap.</description><subject>40 CHEMISTRY</subject><subject>ABSORPTION</subject><subject>MATERIALS SCIENCE</subject><subject>PARTICLES</subject><subject>PHOTOLUMINESCENCE</subject><subject>POROSITY</subject><subject>POROUS MATERIALS</subject><subject>SILICON</subject><issn>1520-6106</issn><issn>1520-5207</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNptkMFOwzAMhiMEEmNw4A3CgQOHgtOuaXscgzGkSZvWceESZWmyZeuaKUkFvD2Bop2wZNmSP_-yf4SuCdwTiMnD9lAUkJKiPkE9ksYQhcxO_3pKgJ6jC-e2AHEa57SHdrOD14LXeLhyxobeNJg3FZ5vjDd1u9eNdEI2QuLSt5WWDhuFx1bKqPSB080az401rcOlrrUI22Nd7x3-0H6DJ3q9-R077cPqJTpTvHby6q_20dv4eTmaRNPZy-toOI14EhMfKQ4geK7SrKrSXIWQYpWHr0QKvKA50KLiWZEoUAp4kiVcJkqJwYDSAiCVSR_ddLrGec2c0F6KTTitkcIzmgdDssDcdYwI1zkrFTtYvef2ixFgP06yo5OBjTpWOy8_jyC3O0azJEvZcl6y-GkxWsTLd_YY-NuO58KxrWltE779R_cbSk6Ddg</recordid><startdate>19990701</startdate><enddate>19990701</enddate><creator>Xu, Dongsheng</creator><creator>Guo, Guolin</creator><creator>Gui, Linlin</creator><creator>Tang, Youqi</creator><creator>Zhang, B. R</creator><creator>Qin, G. G</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19990701</creationdate><title>Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities</title><author>Xu, Dongsheng ; Guo, Guolin ; Gui, Linlin ; Tang, Youqi ; Zhang, B. R ; Qin, G. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a321t-fa00ca8f57dd58ffffecb8905c50a968069da793f0ff0a373ae3ffc44669005e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>40 CHEMISTRY</topic><topic>ABSORPTION</topic><topic>MATERIALS SCIENCE</topic><topic>PARTICLES</topic><topic>PHOTOLUMINESCENCE</topic><topic>POROSITY</topic><topic>POROUS MATERIALS</topic><topic>SILICON</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Dongsheng</creatorcontrib><creatorcontrib>Guo, Guolin</creatorcontrib><creatorcontrib>Gui, Linlin</creatorcontrib><creatorcontrib>Tang, Youqi</creatorcontrib><creatorcontrib>Zhang, B. R</creatorcontrib><creatorcontrib>Qin, G. G</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Dongsheng</au><au>Guo, Guolin</au><au>Gui, Linlin</au><au>Tang, Youqi</au><au>Zhang, B. R</au><au>Qin, G. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities</atitle><jtitle>Journal of Physical Chemistry B: Materials, Surfaces, Interfaces, amp Biophysical</jtitle><addtitle>J. Phys. Chem. B</addtitle><date>1999-07-01</date><risdate>1999</risdate><volume>103</volume><issue>26</issue><spage>5468</spage><epage>5471</epage><pages>5468-5471</pages><issn>1520-6106</issn><eissn>1520-5207</eissn><abstract>We have prepared noncollapsed free-standing porous silicon (PS) films with various porosities even higher than 90% using the electrochemical etching−electropolishing, chemical dissolving, and supercritical drying methods. The result of a study combining optical absorption and photoluminescence (PL) from free-standing PS films with porosities in the range 41−94% is presented. A blue shift of the transmission curves and an increase of the PL intensity with enhancing porosity have been observed. However, no notable blue shift of the PL peak position with increasing porosity has been observed. Furthermore, the square root of the absorption coefficient (α) of the PS samples with high porosities times photon energy (hν) vs photon energy can no longer be fitted by a linear function. Even for PS films with porosity of 94%, the absorption data do not show that the nanometer Si particles in the PS have a direct energy gap.</abstract><cop>United States</cop><pub>American Chemical Society</pub><doi>10.1021/jp990519l</doi><tpages>4</tpages></addata></record>
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subjects	40 CHEMISTRY ABSORPTION MATERIALS SCIENCE PARTICLES PHOTOLUMINESCENCE POROSITY POROUS MATERIALS SILICON
title	Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T23%3A41%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20Absorption%20and%20Photoluminescence%20Studies%20of%20Free-Standing%20Porous%20Silicon%20Films%20with%20High%20Porosities&rft.jtitle=Journal%20of%20Physical%20Chemistry%20B:%20Materials,%20Surfaces,%20Interfaces,%20amp%20Biophysical&rft.au=Xu,%20Dongsheng&rft.date=1999-07-01&rft.volume=103&rft.issue=26&rft.spage=5468&rft.epage=5471&rft.pages=5468-5471&rft.issn=1520-6106&rft.eissn=1520-5207&rft_id=info:doi/10.1021/jp990519l&rft_dat=%3Cistex_osti_%3Eark_67375_TPS_2DRCR2TZ_B%3C/istex_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true