Illumination-Enhanced Hysteresis of Transistors Based on Carbon Nanotube Networks

The hysteresis in single-walled carbon nanotube (SWNT) transistors comprising Si backgate (SiO2 on doped Si) is normally attributed to either carrier injections from SWNTs to their surroundings or the presence of charge traps at a Si−SiO2 interface. We show that the hysteresis in SWNT transistors wi...

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Veröffentlicht in:	Journal of physical chemistry. C 2009-03, Vol.113 (12), p.4745-4747
Hauptverfasser:	Lee, Chun Wei, Dong, Xiaochen, Goh, Seok Hong, Wang, Junling, Wei, Jun, Li, Lain-Jong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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