Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays

Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays

In this paper, single-crystal ZnS column arrays are prepared on the ZnS wafer. The ZnS column arrays are then utilized as a transition layer to achieve large-scale homoepitaxial growth of ZnS nanowire arrays. Through annealing ZnS columns coated with Au films at different temperatures, the Au partic...

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Veröffentlicht in:Journal of physical chemistry. C 2009-03, Vol.113 (11), p.4335-4339
Hauptverfasser: Wang, Min, Fei, Guang Tao, Zhu, Xiao Guang, Wu, Bing, Kong, Ming Guang, Zhang, Li De
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C: Nanops and Nanostructures
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container_issue 11
container_start_page 4335
container_title Journal of physical chemistry. C
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creator Wang, Min
Fei, Guang Tao
Zhu, Xiao Guang
Wu, Bing
Kong, Ming Guang
Zhang, Li De
description In this paper, single-crystal ZnS column arrays are prepared on the ZnS wafer. The ZnS column arrays are then utilized as a transition layer to achieve large-scale homoepitaxial growth of ZnS nanowire arrays. Through annealing ZnS columns coated with Au films at different temperatures, the Au particle density is controlled, and the ZnS nanowire density is controlled via a vapor−liquid−solid process ranging from 0.33 to 3.04 wires/μm2. This universal method can be easily applied to homoepitaxially grow nanowire arrays of other materials and tune the nanowire density.
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title Density-Controlled Homoepitaxial Growth of ZnS Nanowire Arrays
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