Size and Temperature Dependencies of the Low-Energy Electronic Structure of PbS Quantum Dots

The analysis of the steady-state and transient photoluminescence (PL) of PbS quantum dots (QDs) of diameter in the 3.2–6.9 nm range in porous matrixes at temperatures 77–300 K shows that QDs of different sizes possess entirely different temperature dependencies of their PL properties. The data indic...

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Veröffentlicht in:Journal of physical chemistry. C 2014-09, Vol.118 (35), p.20721-20726
Hauptverfasser: Litvin, Aleksandr P, Parfenov, Peter S, Ushakova, Elena V, Simões Gamboa, Ana L, Fedorov, Anatoly V, Baranov, Alexander V
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container_end_page 20726
container_issue 35
container_start_page 20721
container_title Journal of physical chemistry. C
container_volume 118
creator Litvin, Aleksandr P
Parfenov, Peter S
Ushakova, Elena V
Simões Gamboa, Ana L
Fedorov, Anatoly V
Baranov, Alexander V
description The analysis of the steady-state and transient photoluminescence (PL) of PbS quantum dots (QDs) of diameter in the 3.2–6.9 nm range in porous matrixes at temperatures 77–300 K shows that QDs of different sizes possess entirely different temperature dependencies of their PL properties. The data indicates the presence of two emissive “in-gap” states in the low-energy electronic structure of the QDs with characteristic dependencies on QD size and temperature. The lowest energy state is associated with surface defect states while the higher energy state is “intrinsic” and arises due to size-dependent splitting of the lowest excitons.
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