Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors

Single-layer graphene was transferred onto (1 – x)[Pb(Mg1/3Nb2/3)O3]–x[PbTiO3]0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window...

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Veröffentlicht in:	Journal of physical chemistry. C 2013-07, Vol.117 (26), p.13747-13752
Hauptverfasser:	Jie, Wenjing, Hui, Yeung Yu, Chan, Ngai Yui, Zhang, Yang, Lau, Shu Ping, Hao, Jianhua
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Transistors
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