Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors
Single-layer graphene was transferred onto (1 – x)[Pb(Mg1/3Nb2/3)O3]–x[PbTiO3]0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window...
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| Veröffentlicht in: | Journal of physical chemistry. C 2013-07, Vol.117 (26), p.13747-13752 |
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| container_end_page | 13752 |
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| container_issue | 26 |
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| container_title | Journal of physical chemistry. C |
| container_volume | 117 |
| creator | Jie, Wenjing Hui, Yeung Yu Chan, Ngai Yui Zhang, Yang Lau, Shu Ping Hao, Jianhua |
| description | Single-layer graphene was transferred onto (1 – x)[Pb(Mg1/3Nb2/3)O3]–x[PbTiO3]0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window and an on/off current ratio of about 5.5 in air ambient conditions at room temperature. By prepoling the PMN-PT substrate, the FET showed a reduction in p-doping for the graphene/PMN-PT FET, implying the pre-polarization and the polarization reversal played an important part in the behaviors of graphene on PMN-PT. The observation of simultaneous rise in gate current with the dramatic transition in drain current suggested that the transport properties of graphene mainly stemmed from the coupling of the ferroelectric polarization to the charge carriers in graphene. The field effect mobility and the excess hole concentration were calculated to be about 4.52 × 103 cm2 V–1 s–1 and 6.74 × 1012 cm–2, respectively. Furthermore, the sheet resistance showed high dependence on temperature and gate voltage, indicating metallic behaviors of graphene on PMN-PT. Additionally, the sheet resistance of graphene on the PMN-PT was much smaller than that on SiO2. |
| doi_str_mv | 10.1021/jp404350r |
| format | Article |
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The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window and an on/off current ratio of about 5.5 in air ambient conditions at room temperature. By prepoling the PMN-PT substrate, the FET showed a reduction in p-doping for the graphene/PMN-PT FET, implying the pre-polarization and the polarization reversal played an important part in the behaviors of graphene on PMN-PT. The observation of simultaneous rise in gate current with the dramatic transition in drain current suggested that the transport properties of graphene mainly stemmed from the coupling of the ferroelectric polarization to the charge carriers in graphene. The field effect mobility and the excess hole concentration were calculated to be about 4.52 × 103 cm2 V–1 s–1 and 6.74 × 1012 cm–2, respectively. Furthermore, the sheet resistance showed high dependence on temperature and gate voltage, indicating metallic behaviors of graphene on PMN-PT. Additionally, the sheet resistance of graphene on the PMN-PT was much smaller than that on SiO2.</description><identifier>ISSN: 1932-7447</identifier><identifier>EISSN: 1932-7455</identifier><identifier>DOI: 10.1021/jp404350r</identifier><language>eng</language><publisher>Columbus, OH: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electronics ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Materials science ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Specific materials ; Transistors</subject><ispartof>Journal of physical chemistry. C, 2013-07, Vol.117 (26), p.13747-13752</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a355t-8dc0f0be5c45e836441bbd356af1f14effdd2107bbbdfd597d73e3499037f5513</citedby><cites>FETCH-LOGICAL-a355t-8dc0f0be5c45e836441bbd356af1f14effdd2107bbbdfd597d73e3499037f5513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/jp404350r$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/jp404350r$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2764,27075,27923,27924,56737,56787</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27529267$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jie, Wenjing</creatorcontrib><creatorcontrib>Hui, Yeung Yu</creatorcontrib><creatorcontrib>Chan, Ngai Yui</creatorcontrib><creatorcontrib>Zhang, Yang</creatorcontrib><creatorcontrib>Lau, Shu Ping</creatorcontrib><creatorcontrib>Hao, Jianhua</creatorcontrib><title>Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors</title><title>Journal of physical chemistry. C</title><addtitle>J. Phys. Chem. C</addtitle><description>Single-layer graphene was transferred onto (1 – x)[Pb(Mg1/3Nb2/3)O3]–x[PbTiO3]0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window and an on/off current ratio of about 5.5 in air ambient conditions at room temperature. By prepoling the PMN-PT substrate, the FET showed a reduction in p-doping for the graphene/PMN-PT FET, implying the pre-polarization and the polarization reversal played an important part in the behaviors of graphene on PMN-PT. The observation of simultaneous rise in gate current with the dramatic transition in drain current suggested that the transport properties of graphene mainly stemmed from the coupling of the ferroelectric polarization to the charge carriers in graphene. The field effect mobility and the excess hole concentration were calculated to be about 4.52 × 103 cm2 V–1 s–1 and 6.74 × 1012 cm–2, respectively. Furthermore, the sheet resistance showed high dependence on temperature and gate voltage, indicating metallic behaviors of graphene on PMN-PT. Additionally, the sheet resistance of graphene on the PMN-PT was much smaller than that on SiO2.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Materials science</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Specific materials</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jie, Wenjing</creatorcontrib><creatorcontrib>Hui, Yeung Yu</creatorcontrib><creatorcontrib>Chan, Ngai Yui</creatorcontrib><creatorcontrib>Zhang, Yang</creatorcontrib><creatorcontrib>Lau, Shu Ping</creatorcontrib><creatorcontrib>Hao, Jianhua</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of physical chemistry. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jie, Wenjing</au><au>Hui, Yeung Yu</au><au>Chan, Ngai Yui</au><au>Zhang, Yang</au><au>Lau, Shu Ping</au><au>Hao, Jianhua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors</atitle><jtitle>Journal of physical chemistry. C</jtitle><addtitle>J. Phys. Chem. C</addtitle><date>2013-07-03</date><risdate>2013</risdate><volume>117</volume><issue>26</issue><spage>13747</spage><epage>13752</epage><pages>13747-13752</pages><issn>1932-7447</issn><eissn>1932-7455</eissn><abstract>Single-layer graphene was transferred onto (1 – x)[Pb(Mg1/3Nb2/3)O3]–x[PbTiO3]0.3 (PMN-PT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The graphene/PMN-PT FET exhibited p-type characteristics with a large memory window and an on/off current ratio of about 5.5 in air ambient conditions at room temperature. By prepoling the PMN-PT substrate, the FET showed a reduction in p-doping for the graphene/PMN-PT FET, implying the pre-polarization and the polarization reversal played an important part in the behaviors of graphene on PMN-PT. The observation of simultaneous rise in gate current with the dramatic transition in drain current suggested that the transport properties of graphene mainly stemmed from the coupling of the ferroelectric polarization to the charge carriers in graphene. The field effect mobility and the excess hole concentration were calculated to be about 4.52 × 103 cm2 V–1 s–1 and 6.74 × 1012 cm–2, respectively. Furthermore, the sheet resistance showed high dependence on temperature and gate voltage, indicating metallic behaviors of graphene on PMN-PT. Additionally, the sheet resistance of graphene on the PMN-PT was much smaller than that on SiO2.</abstract><cop>Columbus, OH</cop><pub>American Chemical Society</pub><doi>10.1021/jp404350r</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronics Exact sciences and technology Fullerenes and related materials diamonds, graphite Materials science Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Specific materials Transistors |
| title | Ferroelectric Polarization Effects on the Transport Properties of Graphene/PMN-PT Field Effect Transistors |
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