Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation

Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-d...

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Veröffentlicht in:	Journal of physical chemistry. C 2012-03, Vol.116 (8), p.5062-5066
Hauptverfasser:	Zhao, W, Höfert, O, Gotterbarm, K, Zhu, J.F, Papp, C, Steinrück, H.-P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in other materials Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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