Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) Films

Efficiencies of Electron Injection from Excited N3 Dye into Nanocrystalline Semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) Films

The efficiency of electron injection from excited N3 dye (cis-bis-(4,4‘-dicarboxy-2,2‘-bipyridine) dithiocyanato ruthenium(II), Ru(dcbpy)2 (NCS)2), into various nanocrystalline semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) films was studied by transient absorption spectroscopy. For TiO2, ZnO,...

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Veröffentlicht in:The journal of physical chemistry. B 2004-04, Vol.108 (15), p.4818-4822
Hauptverfasser: Katoh, Ryuzi, Furube, Akihiro, Yoshihara, Toshitada, Hara, Kohjiro, Fujihashi, Gaku, Takano, Shingo, Murata, Shigeo, Arakawa, Hironori, Tachiya, M
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container_end_page 4822
container_issue 15
container_start_page 4818
container_title The journal of physical chemistry. B
container_volume 108
creator Katoh, Ryuzi
Furube, Akihiro
Yoshihara, Toshitada
Hara, Kohjiro
Fujihashi, Gaku
Takano, Shingo
Murata, Shigeo
Arakawa, Hironori
Tachiya, M
description The efficiency of electron injection from excited N3 dye (cis-bis-(4,4‘-dicarboxy-2,2‘-bipyridine) dithiocyanato ruthenium(II), Ru(dcbpy)2 (NCS)2), into various nanocrystalline semiconductor (ZrO2, TiO2, ZnO, Nb2O5, SnO2, In2O3) films was studied by transient absorption spectroscopy. For TiO2, ZnO, Nb2O5, SnO2, or In2O3 films, injection efficiencies were found to be very high; for ZrO2 film, the efficiency was very low. These findings indicate that electron injection occurs efficiently if the LUMO level of N3 dye is located sufficiently far above the bottom of the conduction band of the semiconductor film. On the basis of the results, we discuss the reason TiO2 exhibits higher solar cell performance than other materials.
doi_str_mv 10.1021/jp031260g
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