Low-Temperature Growth of Epitaxial β-SiC on Si(100) Using Supersonic Molecular Beams of Methylsilane
Epitaxial β-SiC films have been successfully grown on Si(100) at substrate temperatures considerably lower than those used during conventional CVD growth. This has been achieved using translationally energetic and spatially directed methylsilane delivered via seeded supersonic molecular beams. Methy...
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| Veröffentlicht in: | The journal of physical chemistry. B 2002-08, Vol.106 (33), p.8019-8028 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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