Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces

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Veröffentlicht in:Journal of physical chemistry (1952) 1988-10, Vol.92 (20), p.5766-5770
Hauptverfasser: Lunt, Sharon R, Casagrande, Louis G, Tufts, Bruce J, Lewis, Nathan S
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Sprache:eng
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Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Photoelectrochemistry. Electrochemiluminescence
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container_end_page 5770
container_issue 20
container_start_page 5766
container_title Journal of physical chemistry (1952)
container_volume 92
creator Lunt, Sharon R
Casagrande, Louis G
Tufts, Bruce J
Lewis, Nathan S
description
doi_str_mv 10.1021/j100331a043
format Article
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source ACS Publications
subjects Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Photoelectrochemistry. Electrochemiluminescence
title Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se-/2-, n-GaAs/CH3CN-ferrocene+/0, and n-GaAs/Au interfaces
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