Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

A family of heteroleptic aluminum compounds were synthesized as potential precursors for aluminum oxide deposition by atomic layer deposition (ALD). The synthesis and thermal chemistry were considered in the context of precursor selection, and [MeC(NiPr)2]AlEt2 was selected as a precursor. It was us...

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Veröffentlicht in:Chemistry of materials 2008-12, Vol.20 (23), p.7287-7291
Hauptverfasser: Brazeau, Allison L, Barry, Seán T
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Sprache:eng
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Chemical Vapor Deposition
Coatings, Thin films, and Monolayers
Precursor Routes to Materials (including Polymer-Derived Ceramics)
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description A family of heteroleptic aluminum compounds were synthesized as potential precursors for aluminum oxide deposition by atomic layer deposition (ALD). The synthesis and thermal chemistry were considered in the context of precursor selection, and [MeC(NiPr)2]AlEt2 was selected as a precursor. It was used to deposit aluminum oxide with a high growth rate (2.3−2.7 Å/cycle) at 175 °C, and the films were found to be uniform and smooth (4.71 Å rms roughness).
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subjects Chemical Vapor Deposition
Coatings, Thin films, and Monolayers
Precursor Routes to Materials (including Polymer-Derived Ceramics)
title Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor
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