Enhanced Doping Efficiency of Al-Doped ZnO by Atomic Layer Deposition Using Dimethylaluminum Isopropoxide as an Alternative Aluminum Precursor

Atomic layer deposition offers the unique opportunity to control, at the atomic level, the 3D distribution of dopants in highly uniform and conformal thin films. Here, it is demonstrated that the maximum doping efficiency of Al in ZnO can be improved from ∼10% to almost 60% using dimethylaluminum is...

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Veröffentlicht in:	Chemistry of materials 2013-11, Vol.25 (22), p.4619-4622
Hauptverfasser:	Wu, Y, Potts, S. E, Hermkens, P. M, Knoops, H. C. M, Roozeboom, F, Kessels, W. M. M
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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