Room-Temperature Atomic Layer Deposition of Platinum

Room-Temperature Atomic Layer Deposition of Platinum

Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasm...

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Veröffentlicht in:Chemistry of materials 2013-05, Vol.25 (9), p.1769-1774
Hauptverfasser: Mackus, Adriaan J. M, Garcia-Alonso, Diana, Knoops, Harm C. M, Bol, Ageeth A, Kessels, Wilhelmus M. M
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container_end_page 1774
container_issue 9
container_start_page 1769
container_title Chemistry of materials
container_volume 25
creator Mackus, Adriaan J. M
Garcia-Alonso, Diana
Knoops, Harm C. M
Bol, Ageeth A
Kessels, Wilhelmus M. M
description Plasma-assisted atomic layer deposition (ALD) processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18–24 μΩ cm were obtained for processes consisting of MeCpPtMe3 dosing, O2 plasma exposure, and H2 gas or H2 plasma exposure. The H2 pulses were used to reduce the PtO x that is otherwise deposited at low substrate temperatures. It is shown that the processes enable the deposition of Pt on polymer, textile, and paper substrates, which is a significant result as it demonstrates the broad application range of Pt ALD, including applications involving temperature-sensitive materials.
doi_str_mv 10.1021/cm400274n
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title Room-Temperature Atomic Layer Deposition of Platinum
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