Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

We describe the systematic epitaxial engineering of device-quality elemental structures in the Ge/Si system. By introducing small concentrations of (GeH3)2CH2 or GeH3CH3 organometallic additives into conventional Ge2H6, we have developed several new low-temperature CVD growth strategies that permit...

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Veröffentlicht in:	Chemistry of materials 2007-11, Vol.19 (24), p.5910-5925
Hauptverfasser:	Fang, Y.-Y, Tolle, J, Tice, Jesse, Chizmeshya, A. V. G, Kouvetakis, J, D’Costa, V. R, Menéndez, José
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Vapor Deposition Electronic Materials Optical Materials (including Non-Linear Optic, Photonic, and Optoelectronic Materials)
Online-Zugang:	Volltext
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