Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics
Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are...
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| Veröffentlicht in: | Chemistry of materials 2007-08, Vol.19 (16), p.4023-4029 |
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| container_title | Chemistry of materials |
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| creator | Meyers, Stephen T Anderson, Jeremy T Hong, David Hung, Celia M Wager, John F Keszler, Douglas A |
| description | Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are investigated by using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitor and thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 in combination with leakage current densities 4 MV cm-1. |
| doi_str_mv | 10.1021/cm0702619 |
| format | Article |
| fullrecord | <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_cm0702619</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>f48399591</sourcerecordid><originalsourceid>FETCH-LOGICAL-a363t-b98acb84e426efc4d225d4dd7a5dbc2caaa1a8bb210beb88f43c62d67766db5d3</originalsourceid><addsrcrecordid>eNptz01LAkEAxvEhCjLr0DfYS4cOUzOz8-ZRNC0QNDTwNszb4ti-yMwu6Ldvw_DU6bn8eOAPwCNGLxgR_GorJBDheHQFBpgRBBlC5BoMkBwJSAXjt-AupT1CuOdyAMbrpuza0NRwFRvrU_IuG5ddFequypbH4Hy22jXpsNOtzza7UMNZKKtsGnzpbRuDTffgptBl8g9_OwRfs7fN5B0ulvOPyXgBdc7zFpqR1NZI6inhvrDUEcIcdU5o5owlVmuNtTSGYGS8kbKgueXEcSE4d4a5fAiez782NilFX6hDDJWOJ4WR-m1Xl_bewrMNqfXHC9TxW3GRC6Y2q7WaTvAWzbefivb-6ey1TWrfdLHuS_75_QGcf2fl</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics</title><source>ACS Publications</source><creator>Meyers, Stephen T ; Anderson, Jeremy T ; Hong, David ; Hung, Celia M ; Wager, John F ; Keszler, Douglas A</creator><creatorcontrib>Meyers, Stephen T ; Anderson, Jeremy T ; Hong, David ; Hung, Celia M ; Wager, John F ; Keszler, Douglas A</creatorcontrib><description>Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are investigated by using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitor and thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 in combination with leakage current densities <10 nA cm-2 at 1 MV cm-1 and current-limited breakdown fields up to 10 MV cm-1. Thin-film transistors fabricated with these oxide phosphate dielectrics and sputtered ZnO channels exhibit strong field-effect and current saturation with incremental mobilities up to 3.5 cm2 V-1 s-1. The ability of the amorphous matrix to accommodate additional oxide components is demonstrated by the incorporation of La2O3 and a resulting increase in film permittivity to 8.5, while maintaining breakdown fields >4 MV cm-1.</description><identifier>ISSN: 0897-4756</identifier><identifier>EISSN: 1520-5002</identifier><identifier>DOI: 10.1021/cm0702619</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>Chemistry of materials, 2007-08, Vol.19 (16), p.4023-4029</ispartof><rights>Copyright © 2007 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a363t-b98acb84e426efc4d225d4dd7a5dbc2caaa1a8bb210beb88f43c62d67766db5d3</citedby><cites>FETCH-LOGICAL-a363t-b98acb84e426efc4d225d4dd7a5dbc2caaa1a8bb210beb88f43c62d67766db5d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/cm0702619$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/cm0702619$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27055,27903,27904,56716,56766</link.rule.ids></links><search><creatorcontrib>Meyers, Stephen T</creatorcontrib><creatorcontrib>Anderson, Jeremy T</creatorcontrib><creatorcontrib>Hong, David</creatorcontrib><creatorcontrib>Hung, Celia M</creatorcontrib><creatorcontrib>Wager, John F</creatorcontrib><creatorcontrib>Keszler, Douglas A</creatorcontrib><title>Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics</title><title>Chemistry of materials</title><addtitle>Chem. Mater</addtitle><description>Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are investigated by using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitor and thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 in combination with leakage current densities <10 nA cm-2 at 1 MV cm-1 and current-limited breakdown fields up to 10 MV cm-1. Thin-film transistors fabricated with these oxide phosphate dielectrics and sputtered ZnO channels exhibit strong field-effect and current saturation with incremental mobilities up to 3.5 cm2 V-1 s-1. The ability of the amorphous matrix to accommodate additional oxide components is demonstrated by the incorporation of La2O3 and a resulting increase in film permittivity to 8.5, while maintaining breakdown fields >4 MV cm-1.</description><issn>0897-4756</issn><issn>1520-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNptz01LAkEAxvEhCjLr0DfYS4cOUzOz8-ZRNC0QNDTwNszb4ti-yMwu6Ldvw_DU6bn8eOAPwCNGLxgR_GorJBDheHQFBpgRBBlC5BoMkBwJSAXjt-AupT1CuOdyAMbrpuza0NRwFRvrU_IuG5ddFequypbH4Hy22jXpsNOtzza7UMNZKKtsGnzpbRuDTffgptBl8g9_OwRfs7fN5B0ulvOPyXgBdc7zFpqR1NZI6inhvrDUEcIcdU5o5owlVmuNtTSGYGS8kbKgueXEcSE4d4a5fAiez782NilFX6hDDJWOJ4WR-m1Xl_bewrMNqfXHC9TxW3GRC6Y2q7WaTvAWzbefivb-6ey1TWrfdLHuS_75_QGcf2fl</recordid><startdate>20070807</startdate><enddate>20070807</enddate><creator>Meyers, Stephen T</creator><creator>Anderson, Jeremy T</creator><creator>Hong, David</creator><creator>Hung, Celia M</creator><creator>Wager, John F</creator><creator>Keszler, Douglas A</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20070807</creationdate><title>Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics</title><author>Meyers, Stephen T ; Anderson, Jeremy T ; Hong, David ; Hung, Celia M ; Wager, John F ; Keszler, Douglas A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a363t-b98acb84e426efc4d225d4dd7a5dbc2caaa1a8bb210beb88f43c62d67766db5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meyers, Stephen T</creatorcontrib><creatorcontrib>Anderson, Jeremy T</creatorcontrib><creatorcontrib>Hong, David</creatorcontrib><creatorcontrib>Hung, Celia M</creatorcontrib><creatorcontrib>Wager, John F</creatorcontrib><creatorcontrib>Keszler, Douglas A</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Chemistry of materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meyers, Stephen T</au><au>Anderson, Jeremy T</au><au>Hong, David</au><au>Hung, Celia M</au><au>Wager, John F</au><au>Keszler, Douglas A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics</atitle><jtitle>Chemistry of materials</jtitle><addtitle>Chem. Mater</addtitle><date>2007-08-07</date><risdate>2007</risdate><volume>19</volume><issue>16</issue><spage>4023</spage><epage>4029</epage><pages>4023-4029</pages><issn>0897-4756</issn><eissn>1520-5002</eissn><abstract>Aluminum oxide phosphate thin films have been deposited via spin coating from aqueous solution and utilized as gate dielectrics in thin-film transistors. Films are atomically smooth, dense, and amorphous, while exhibiting excellent morphological stability to 1000 °C. Film chemistry and structure are investigated by using an array of analytical techniques including X-ray diffraction, FT-IR spectroscopy, and electron-microprobe analysis. Dielectric film functionality and quality are explored through integration in capacitor and thin-film transistor devices. Film permittivity for an Al2PO5.5 composition is found to be 4.8 in combination with leakage current densities <10 nA cm-2 at 1 MV cm-1 and current-limited breakdown fields up to 10 MV cm-1. Thin-film transistors fabricated with these oxide phosphate dielectrics and sputtered ZnO channels exhibit strong field-effect and current saturation with incremental mobilities up to 3.5 cm2 V-1 s-1. The ability of the amorphous matrix to accommodate additional oxide components is demonstrated by the incorporation of La2O3 and a resulting increase in film permittivity to 8.5, while maintaining breakdown fields >4 MV cm-1.</abstract><pub>American Chemical Society</pub><doi>10.1021/cm0702619</doi><tpages>7</tpages></addata></record> |
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| title | Solution-Processed Aluminum Oxide Phosphate Thin-Film Dielectrics |
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