Morphological and Transistor Studies of Organic Molecular Semiconductors with Anisotropic Electrical Characteristics
Oriented thin films of organic semiconducting small molecules were prepared by crystallization on rubbed alignment layers. Polarized absorption spectra showed that the long axis of the conjugated backbones was highly oriented along the rubbing direction and parallel to the substrates. Transmission e...
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| Veröffentlicht in: | Chemistry of materials 2001-04, Vol.13 (4), p.1341-1348 |
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| container_end_page | 1348 |
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| container_issue | 4 |
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| container_title | Chemistry of materials |
| container_volume | 13 |
| creator | Chen, X. Linda Lovinger, Andrew J Bao, Zhenan Sapjeta, Joyce |
| description | Oriented thin films of organic semiconducting small molecules were prepared by crystallization on rubbed alignment layers. Polarized absorption spectra showed that the long axis of the conjugated backbones was highly oriented along the rubbing direction and parallel to the substrates. Transmission electron microscopy and diffraction confirmed that the molecules and in many cases the resulting crystals are aligned. Using the above aligned films as semiconducting layers, we fabricated field-effect transistors having anisotropic mobilities with ratios greater than 15. Several common organic semiconductors have been investigated, and the results indicate that this growth method is generally successful for achieving macroscopic alignment of these semiconducting molecules (and frequently their crystals, as well). |
| doi_str_mv | 10.1021/cm0008563 |
| format | Article |
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Several common organic semiconductors have been investigated, and the results indicate that this growth method is generally successful for achieving macroscopic alignment of these semiconducting molecules (and frequently their crystals, as well).</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Vacuum deposition</subject><issn>0897-4756</issn><issn>1520-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNpt0L1OwzAUBWALgUQpDLxBJMTAEPBPYjsjlEKRWhWpZbZuHad1SePKTgS8PYagTkwe7udj34PQJcG3BFNyp3cYY5lzdoQGJKc4zTGmx2iAZSHSTOT8FJ2FsMWYRC4HqJ05v9-42q2thjqBpkyWHppgQ-t8smi70pqQuCqZ-zU0ViczVxvd1RCHZme1a8pORxqSD9tukvvGBtd6t49yHGHrf2NHG_CgW-NjrNXhHJ1UUAdz8XcO0dvTeDmapNP588vofpoCo6xNK86E5pplGSsZ56uMG5ZJA0JmIBnjFQiKjZZ6ZZjmIDhUREpOsaQ8J8DYEN30udq7ELyp1N7bHfgvRbD6qUsd6or2qrd7CPHLVSxB23C4UBSCijyqtFdxEfN5mIJ_V1wwkavl60LRB_Y4mS0KRaK_7j3ooLau803c95_XvwFEL4Y6</recordid><startdate>20010416</startdate><enddate>20010416</enddate><creator>Chen, X. 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Mater</addtitle><date>2001-04-16</date><risdate>2001</risdate><volume>13</volume><issue>4</issue><spage>1341</spage><epage>1348</epage><pages>1341-1348</pages><issn>0897-4756</issn><eissn>1520-5002</eissn><abstract>Oriented thin films of organic semiconducting small molecules were prepared by crystallization on rubbed alignment layers. Polarized absorption spectra showed that the long axis of the conjugated backbones was highly oriented along the rubbing direction and parallel to the substrates. Transmission electron microscopy and diffraction confirmed that the molecules and in many cases the resulting crystals are aligned. Using the above aligned films as semiconducting layers, we fabricated field-effect transistors having anisotropic mobilities with ratios greater than 15. 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| ispartof | Chemistry of materials, 2001-04, Vol.13 (4), p.1341-1348 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1021_cm0008563 |
| source | ACS Publications |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vacuum deposition |
| title | Morphological and Transistor Studies of Organic Molecular Semiconductors with Anisotropic Electrical Characteristics |
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