Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface a...

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Veröffentlicht in:	Crystal growth & design 2014-03, Vol.14 (3), p.1272-1278
Hauptverfasser:	Gao, Bing, Kakimoto, Koichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Deposition by sputtering Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Stacking faults and other planar or extended defects Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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