Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method
To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface a...
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| Veröffentlicht in: | Crystal growth & design 2014-03, Vol.14 (3), p.1272-1278 |
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| container_title | Crystal growth & design |
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| creator | Gao, Bing Kakimoto, Koichi |
| description | To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process. |
| doi_str_mv | 10.1021/cg401789g |
| format | Article |
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The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. Therefore, to reduce BPDs and stacking faults, it is better to maintain or reduce the convexity of the growth surface and increase the cooling rate during the cooling process.</description><identifier>ISSN: 1528-7483</identifier><identifier>EISSN: 1528-7505</identifier><identifier>DOI: 10.1021/cg401789g</identifier><language>eng</language><publisher>Washington,DC: American Chemical Society</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Deposition by sputtering ; Exact sciences and technology ; Linear defects: dislocations, disclinations ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Stacking faults and other planar or extended defects ; Structure of solids and liquids; crystallography ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Crystal growth & design, 2014-03, Vol.14 (3), p.1272-1278</ispartof><rights>Copyright © 2014 American Chemical Society</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a355t-722e225b62b9b7301e8f0884fe044785bd9836dc27affeec19b64bc2c1a97b23</citedby><cites>FETCH-LOGICAL-a355t-722e225b62b9b7301e8f0884fe044785bd9836dc27affeec19b64bc2c1a97b23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/cg401789g$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/cg401789g$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,2764,27075,27923,27924,56737,56787</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28362546$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Gao, Bing</creatorcontrib><creatorcontrib>Kakimoto, Koichi</creatorcontrib><title>Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method</title><title>Crystal growth & design</title><addtitle>Cryst. 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Growth Des</addtitle><date>2014-03-05</date><risdate>2014</risdate><volume>14</volume><issue>3</issue><spage>1272</spage><epage>1278</epage><pages>1272-1278</pages><issn>1528-7483</issn><eissn>1528-7505</eissn><abstract>To effectively reduce basal plane dislocations (BPDs) during SiC physical vapor transport growth, a three-dimensional model for tracking the multiplication of BPDs has been developed. The distribution of BPDs inside global crystals has been shown. The effects of the convexity of the growth surface and the cooling rate have been analyzed. The results show that the convexity of the growth surface is unfavorable and can cause a large multiplication of BPDs when the crystal grows. Fast cooling during the cooling process is beneficial for the reduction of BPDs because fast cooling can result in a smaller radial flux at the high-temperature region. In addition, fast cooling can reduce the generation of stacking faults during the cooling process. 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| source | ACS Publications |
| subjects | Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Deposition by sputtering Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Stacking faults and other planar or extended defects Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method |
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