Insight into the Growth and Control of Single-Crystal Layers of Ge–Sb–Te Phase-Change Material

Employed for a long time in optical disks, Ge2Sb2Te5 is nowadays considered the most promising material also for phase-change nonvolatile memories. In the current paper, Ge–Sb–Te phase-change material thin films with a nominal composition of Ge2Sb2Te5 were grown by molecular beam epitaxy on slightly...

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Veröffentlicht in:	Crystal growth & design 2011-10, Vol.11 (10), p.4606-4610
Hauptverfasser:	Katmis, Ferhat, Calarco, Raffaella, Perumal, Karthick, Rodenbach, Peter, Giussani, Alessandro, Hanke, Michael, Proessdorf, André, Trampert, Achim, Grosse, Frank, Shayduk, Roman, Campion, Richard, Braun, Wolfgang, Riechert, Henning
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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